Method of producing silicon carbide articles
A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.
- Assignee:
- Dept. of Energy
- Patent Number(s):
- US 4513030
- Application Number:
- TRN: 85-023244
- OSTI ID:
- 5228998
- Resource Relation:
- Patent File Date: Filed date 18 Jun 1982; Other Information: PAT-APPL-389802
- Country of Publication:
- United States
- Language:
- English
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Method of producing silicon carbide articles
Silicon carbide '87; Proceedings of the Symposium, Columbus, OH, Aug. 2-5, 1987