skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Evaluation of unencapsulated ceramic monolithic and MOS thin-film capacitors (25 to 300/sup 0/C)

Technical Report ·
DOI:https://doi.org/10.2172/5217779· OSTI ID:5217779

Several commercial monolithic ceramic and thin-film MOS chip capacitors were evaluated for use in high temperature (300/sup 0/C) geothermal instrumentation. Characteristics of the commonly used dielectric materials (NPO, X7R, BX) and temperature dependence of the insulation resistance are briefly discussed. Some ceramic capacitors with NPO dielectric materials had insulation resistances above 10 megohms at 300/sup 0/C and less than 2% change in capacitance from 25/sup 0/C to 300/sup 0/C, while the X7R and BX dielectric materials exhibited insulation resistances below 10 megohm and changes in capacitance greater then 50%. The thin-film capacitors showed good stability at 300/sup 0/C. However, during aging, bonds and bond pads presented a problem causing intermittently open circuits for some of the devices.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5217779
Report Number(s):
SAND-82-0158; ON: DE82014359; TRN: 82-013872
Resource Relation:
Other Information: Portions of document are illegible
Country of Publication:
United States
Language:
English