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Title: Trends in the open-circuit voltage of semiconductor/liquid interfaces: Studies of n-Al sub x Ga sub 1 minus x As/CH sub 3 CN-Ferrocene sup +/0 and n-Al sub x Ga sub 1 minus x As/KOH-Se sup minus /2 minus (aq) junctions

Abstract

Trends in open-circuit voltage (V{sub oc}), short-circuit current density (J{sub sc}), and energy conversion efficiency have been determined for the n-type Al{sub x}Ga{sub 1{minus}x}As series of photoelectrodes (x = 0.0, 0.09, 0.16, 0.24, 0.31) in contact with CH{sub 3}CN-ferrocene{sup +/0} and KOH-Se{sup {minus}/2{minus}}(aq) electrolytes. V{sub oc} increased linearly with increases in bandgap energy (E{sub g}) of the n-Al{sub x}Ga{sub 1{minus}x}As alloy electrodes, with {Delta}V{sub oc}/{Delta}E{sub g} = 0.45 {plus minus} 0.04 V eV{sup {minus}1} in CH{sub 3}CN and 0.41 {plus minus} 0.09 V eV{sup {minus}1} in KOH-Se{sup {minus}/2{minus}}(aq) at a light intensity sufficient to provide J{sub sc} = 1.0 mA cm{sup {minus}2}. J{sub sc} values under solar-simulated illumination decreased monotonically with increasing bandgap energy. The relatively low value of {Delta}V{sub oc}/{Delta}E{sub g} implies decreases in optimal energy conversion efficiency as the mole fraction of Al in the Al{sub x}Ga{sub 1{minus}x}As alloy is increased. This is in contrast to the behavior of the n-GaAs{sub x}P{sub 1{minus}x} alloy series in the same electrolytes.

Authors:
; ;  [1]
  1. California Inst. of Tech., Pasadena (USA)
Publication Date:
OSTI Identifier:
5212454
Resource Type:
Journal Article
Journal Name:
Journal of Physical Chemistry; (United States)
Additional Journal Information:
Journal Volume: 95:3; Journal ID: ISSN 0022-3654
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; CURRENT DENSITY; FERROCENE; GRADED BAND GAPS; INTERFACES; N-TYPE CONDUCTORS; PHOTOELECTROCHEMICAL CELLS; SEMICONDUCTOR MATERIALS; SOLAR ENERGY CONVERSION; VOLTAMETRY; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COMPLEXES; CONVERSION; DIENES; ELECTRICAL PROPERTIES; ELECTROCHEMICAL CELLS; ENERGY CONVERSION; EQUIPMENT; GALLIUM COMPOUNDS; HYDROCARBONS; IRON COMPLEXES; MATERIALS; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; POLYENES; SOLAR EQUIPMENT; TRANSITION ELEMENT COMPLEXES; 140505* - Solar Energy Conversion- Photochemical, Photobiological, & Thermochemical Conversion- (1980-); 360603 - Materials- Properties

Citation Formats

Casagrande, L G, Tufts, B J, and Lewis, N S. Trends in the open-circuit voltage of semiconductor/liquid interfaces: Studies of n-Al sub x Ga sub 1 minus x As/CH sub 3 CN-Ferrocene sup +/0 and n-Al sub x Ga sub 1 minus x As/KOH-Se sup minus /2 minus (aq) junctions. United States: N. p., 1991. Web. doi:10.1021/j100156a063.
Casagrande, L G, Tufts, B J, & Lewis, N S. Trends in the open-circuit voltage of semiconductor/liquid interfaces: Studies of n-Al sub x Ga sub 1 minus x As/CH sub 3 CN-Ferrocene sup +/0 and n-Al sub x Ga sub 1 minus x As/KOH-Se sup minus /2 minus (aq) junctions. United States. https://doi.org/10.1021/j100156a063
Casagrande, L G, Tufts, B J, and Lewis, N S. Thu . "Trends in the open-circuit voltage of semiconductor/liquid interfaces: Studies of n-Al sub x Ga sub 1 minus x As/CH sub 3 CN-Ferrocene sup +/0 and n-Al sub x Ga sub 1 minus x As/KOH-Se sup minus /2 minus (aq) junctions". United States. https://doi.org/10.1021/j100156a063.
@article{osti_5212454,
title = {Trends in the open-circuit voltage of semiconductor/liquid interfaces: Studies of n-Al sub x Ga sub 1 minus x As/CH sub 3 CN-Ferrocene sup +/0 and n-Al sub x Ga sub 1 minus x As/KOH-Se sup minus /2 minus (aq) junctions},
author = {Casagrande, L G and Tufts, B J and Lewis, N S},
abstractNote = {Trends in open-circuit voltage (V{sub oc}), short-circuit current density (J{sub sc}), and energy conversion efficiency have been determined for the n-type Al{sub x}Ga{sub 1{minus}x}As series of photoelectrodes (x = 0.0, 0.09, 0.16, 0.24, 0.31) in contact with CH{sub 3}CN-ferrocene{sup +/0} and KOH-Se{sup {minus}/2{minus}}(aq) electrolytes. V{sub oc} increased linearly with increases in bandgap energy (E{sub g}) of the n-Al{sub x}Ga{sub 1{minus}x}As alloy electrodes, with {Delta}V{sub oc}/{Delta}E{sub g} = 0.45 {plus minus} 0.04 V eV{sup {minus}1} in CH{sub 3}CN and 0.41 {plus minus} 0.09 V eV{sup {minus}1} in KOH-Se{sup {minus}/2{minus}}(aq) at a light intensity sufficient to provide J{sub sc} = 1.0 mA cm{sup {minus}2}. J{sub sc} values under solar-simulated illumination decreased monotonically with increasing bandgap energy. The relatively low value of {Delta}V{sub oc}/{Delta}E{sub g} implies decreases in optimal energy conversion efficiency as the mole fraction of Al in the Al{sub x}Ga{sub 1{minus}x}As alloy is increased. This is in contrast to the behavior of the n-GaAs{sub x}P{sub 1{minus}x} alloy series in the same electrolytes.},
doi = {10.1021/j100156a063},
url = {https://www.osti.gov/biblio/5212454}, journal = {Journal of Physical Chemistry; (United States)},
issn = {0022-3654},
number = ,
volume = 95:3,
place = {United States},
year = {1991},
month = {2}
}