skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: AlGaAs phased array laser for optical communications. Final report, 6 August 1987-9 June 1989

Abstract

Phased locked arrays of multiple AlGaAs diode laser emitters were investigated both in edge emitting and surface emitting configurations. CSP edge emitter structures, coupled by either evanescent waves or Y-guides, could not achieve the required powers (greater than or similar to 500 mW) while maintaining a diffraction limited, single lobed output beam. Indeed, although the diffraction limit was achieved in this type of device, it was at low powers and in the double lobed radiation pattern characteristic of out-of-phase coupling. Grating surface emitting (GSE) arrays were, therefore, investigated with more promising results. The incorporation of second order gratings in distribute Bragg reflector (DBR) structures allows surface emission, and can be configured to allow injection locking and lateral coupling to populate 2-D arrays that should be able to reach power levels commensurate with the needs of high performance, free space optical communications levels. Also, a new amplitude modulation scheme was developed for GSE array operation.

Authors:
Publication Date:
Research Org.:
David Sarnoff Research Center, Princeton, NJ (USA)
OSTI Identifier:
5201414
Report Number(s):
N-89-28820; NASA-CR-181869; NAS-1.26:181869
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; OPTICAL PROPERTIES; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; PROGRESS REPORT; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DOCUMENT TYPES; GALLIUM COMPOUNDS; LASERS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Carlson, N W. AlGaAs phased array laser for optical communications. Final report, 6 August 1987-9 June 1989. United States: N. p., 1989. Web.
Carlson, N W. AlGaAs phased array laser for optical communications. Final report, 6 August 1987-9 June 1989. United States.
Carlson, N W. Fri . "AlGaAs phased array laser for optical communications. Final report, 6 August 1987-9 June 1989". United States.
@article{osti_5201414,
title = {AlGaAs phased array laser for optical communications. Final report, 6 August 1987-9 June 1989},
author = {Carlson, N W},
abstractNote = {Phased locked arrays of multiple AlGaAs diode laser emitters were investigated both in edge emitting and surface emitting configurations. CSP edge emitter structures, coupled by either evanescent waves or Y-guides, could not achieve the required powers (greater than or similar to 500 mW) while maintaining a diffraction limited, single lobed output beam. Indeed, although the diffraction limit was achieved in this type of device, it was at low powers and in the double lobed radiation pattern characteristic of out-of-phase coupling. Grating surface emitting (GSE) arrays were, therefore, investigated with more promising results. The incorporation of second order gratings in distribute Bragg reflector (DBR) structures allows surface emission, and can be configured to allow injection locking and lateral coupling to populate 2-D arrays that should be able to reach power levels commensurate with the needs of high performance, free space optical communications levels. Also, a new amplitude modulation scheme was developed for GSE array operation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {9}
}

Technical Report:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that may hold this item. Keep in mind that many technical reports are not cataloged in WorldCat.

Save / Share: