Determination of the atomic structure of the epitaxial CoSi/sub 2/:Si(111) interface using high-resolution Rutherford backscattering

Journal Article · Fri Apr 15 00:00:00 EDT 1988 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.37.6305· OSTI ID:5184898

Fischer, A E.M.J.; Gustafsson, T; van der Veen, J F

High-resolution Rutherford backscattering is employed to study the atomic structure at the epitaxial CoSi/sub 2/:Si(111) interface. The Si atoms of the substrate are found to bond to Co atoms in the silicide. In this bonding arrangement the interface Co atoms are fivefold, or possibly eightfold, coordinated. Bond-angle distortions are essentially absent

• Research Organization: FOM Institute for Atomic and Molecular Physics, Foundation for Fundamental Research on Matter, Kruislaan 407, NL-1098 SJ Amsterdam, The Netherlands
• OSTI ID: 5184898
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 37:11
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT SILICIDES
CRYSTAL FACES
INTERFACES
SILICON
BACKSCATTERING
RUTHERFORD SCATTERING
SUBSTRATES
THIN FILMS
COBALT COMPOUNDS
ELASTIC SCATTERING
ELEMENTS
FILMS
SCATTERING
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360602* - Other Materials- Structure & Phase Studies