Substrate-affected instability in accumulation-mode InP metal-insulator-semiconductor field-effect transistor

Journal Article · Wed Jun 15 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340305· OSTI ID:5184614

Lee, P Z; Chang, H L; Meiners, L G

The mechanism for drain current drift in accumulation-type InP metal-insulator-semiconductor field-effect transistor has in the past several years been attributed to oxide traps, interface states, and bulk traps. In this study we have found that deep levels in the semi-insulating InP substrate material can in some cases dominate the current drift of the accumulation-mode metal-insultor-semiconductor field-effect transistor. Iron, which is a deep-level acceptor, when present in large concentrations in semi-insulating InP substrate material, appears to provide poor transistor properties and a large long-term current drift.

• Research Organization: Department of Electrical and Computer Engineering, C-014 University of California, San Diego, La Jolla, California 92093
• OSTI ID: 5184614
• Journal Information: J. Appl. Phys.; (United States), Vol. 63:12
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
DEPOSITION
TRAPS
IRON COMPOUNDS
SURFACE COATING
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRON DRIFT
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
MOBILITY
CURRENTS
DATA
INDIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies