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Title: In situ development of ion bombarded poly(methylmethacrylate) resist in a reactive gas ambient

Abstract

Self-development of poly(methylmethacrylate) (PMMA) resist was done by irradiating various rare-gas ions at 50 keV in a mixed gas atmosphere of XeF/sub 2/ and O/sub 2/ to enhance the self-development rate, and the effects of various exposure parameters, including gas pressure, mixing ratio, dose, current density, pulse repetition period for pulsed beam irradiation, and ion mass, have been investigated. It was observed that the self-developing rate of PMMA for exposure without gas was very low at high doses of greater than or equal to10/sup 15//cm/sup 2/, while the rate with the gas increased almost linearly with increasing dose. This is because the irradiated surface is carbonized and has a low sputtering rate after the high-dose exposure, while the ion assisted chemical process also occurs on the carbonized surface, almost independent of the surface state. It was also found that the self-developing rate depends on the current density and pulse repetition rate. This suggests that the reaction process has a decay time of a few ms.

Authors:
; ; ;
Publication Date:
Research Org.:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
OSTI Identifier:
5183937
Resource Type:
Journal Article
Journal Name:
J. Vac. Sci. Technol., B; (United States)
Additional Journal Information:
Journal Volume: 6:3
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; PMMA; CHEMICAL RADIATION EFFECTS; CURRENT DENSITY; KEV RANGE 10-100; MIXING; OXYGEN; XENON FLUORIDES; CHEMISTRY; ELEMENTS; ENERGY RANGE; ESTERS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; KEV RANGE; NONMETALS; ORGANIC COMPOUNDS; ORGANIC POLYMERS; POLYACRYLATES; POLYMERS; POLYVINYLS; RADIATION CHEMISTRY; RADIATION EFFECTS; RARE GAS COMPOUNDS; XENON COMPOUNDS; 360605* - Materials- Radiation Effects

Citation Formats

Gamo, K, Hamauzu, H, Xu, Z, and Namba, S. In situ development of ion bombarded poly(methylmethacrylate) resist in a reactive gas ambient. United States: N. p., 1988. Web. doi:10.1116/1.584294.
Gamo, K, Hamauzu, H, Xu, Z, & Namba, S. In situ development of ion bombarded poly(methylmethacrylate) resist in a reactive gas ambient. United States. doi:10.1116/1.584294.
Gamo, K, Hamauzu, H, Xu, Z, and Namba, S. Sun . "In situ development of ion bombarded poly(methylmethacrylate) resist in a reactive gas ambient". United States. doi:10.1116/1.584294.
@article{osti_5183937,
title = {In situ development of ion bombarded poly(methylmethacrylate) resist in a reactive gas ambient},
author = {Gamo, K and Hamauzu, H and Xu, Z and Namba, S},
abstractNote = {Self-development of poly(methylmethacrylate) (PMMA) resist was done by irradiating various rare-gas ions at 50 keV in a mixed gas atmosphere of XeF/sub 2/ and O/sub 2/ to enhance the self-development rate, and the effects of various exposure parameters, including gas pressure, mixing ratio, dose, current density, pulse repetition period for pulsed beam irradiation, and ion mass, have been investigated. It was observed that the self-developing rate of PMMA for exposure without gas was very low at high doses of greater than or equal to10/sup 15//cm/sup 2/, while the rate with the gas increased almost linearly with increasing dose. This is because the irradiated surface is carbonized and has a low sputtering rate after the high-dose exposure, while the ion assisted chemical process also occurs on the carbonized surface, almost independent of the surface state. It was also found that the self-developing rate depends on the current density and pulse repetition rate. This suggests that the reaction process has a decay time of a few ms.},
doi = {10.1116/1.584294},
journal = {J. Vac. Sci. Technol., B; (United States)},
number = ,
volume = 6:3,
place = {United States},
year = {1988},
month = {5}
}