Organometallic vapor-phase epitaxy of high-quality Ga sub 0. 51 In sub 0. 49 P at high growth rates

Journal Article · Fri Dec 01 00:00:00 EST 1989 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.343682· OSTI ID:5176737

Cao, D S; Kimball, A W; Chen, G S; Fry, K L; Stringfellow, G B ^[1]

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1. Departments of Materials Science and Engineering and Electrical Engineering, University of Utah, Salt Lake City, Utah 84112 (US)

High-quality Ga{sub 0.51}In{sub 0.49}P, lattice-matched to GaAs, has been grown by atmospheric pressure organometallic vapor-phase epitaxy. The growth was performed at a temperature of 680 {degree}C and a growth rate of about 12 {mu}m/h. The indium distribution coefficient was found to be unity at this growth temperature. At a V/III ratio of 148, the Ga{sub 0.51}In{sub 0.49}P epilayers had photoluminescence (PL) half-widths of 35 and 7.2 meV at 300 and 10 K, respectively, the best reported results to date. As the V/III ratio was changed from 94 to 240, the 300-K energy band gap measured by PL varied only from 1.897 to 1.912 eV, values close to that of Ga{sub 0.51}In{sub 0.49}P grown by liquid-phase epitaxy. An ordered arrangement of gallium and indium atoms on the column III sublattice with a Cu-Pt structure was observed in transmission electron diffraction patterns for all samples. Our results show that the phenomenon of changing energy band gap with varying V/III ratio does not occur at these high growth rates.

• OSTI ID: 5176737
• Journal Information: Journal of Applied Physics; (USA), Vol. 66:11; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM PHOSPHIDES
PHOTOLUMINESCENCE
VAPOR PHASE EPITAXY
INDIUM PHOSPHIDES
ENERGY GAP
GALLIUM ARSENIDES
HIGH TEMPERATURE
LAYERS
MEDIUM PRESSURE
MEDIUM TEMPERATURE
MORPHOLOGY
SUBSTRATES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
ULTRALOW TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
360603* - Materials- Properties