Initial stage of Au adsorption onto a Si(111) surface studied by scanning tunneling microscopy

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585549· OSTI ID:5159999

Hasegawa, T; Takata, K; Hosaka, S; Hosoki, S ^[1]

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1. Hitachi Ltd., Tokyo (Japan)

This paper describes the study of the initial stage of Au adsorption onto a Si(111) surface (<0.2 ML) by scanning tunneling microscopy (STM). Au is deposited at room temperature, and then the sample is annealed at 700C. At the very early stage of Au adsorption Au, the Si substrate itself shows a 5{times} structure. Rows of the Au-adsorbed 5{times} structure are observed to have grown from the lower side of steps.

• OSTI ID: 5159999
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:2; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GOLD
ADSORPTION
SILICON
ELECTRON MICROSCOPY
SORPTIVE PROPERTIES
ANNEALING
DEPOSITION
MICROSTRUCTURE
TEMPERATURE RANGE 0400-1000 K
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
METALS
MICROSCOPY
SEMIMETALS
SORPTION
SURFACE PROPERTIES
TEMPERATURE RANGE
TRANSITION ELEMENTS
360606* - Other Materials- Physical Properties- (1992-)