Growth of aluminum nitride thin films on Si(111) and Si(001): Structural characteristics and development of intrinsic stresses
- Physics Department, General Motors Research and Development Center, Warren, Michigan 48090 (United States)
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
We have grown aluminum nitride thin films by ultrahigh vacuum reactive sputter deposition on Si(111) and Si(001) substrates. We show results of film characterization by Raman scattering, ion beam channeling, and transmission electron microscopy, which establish the occurrence of epitaxial growth of wurtzitic aluminum nitride thin films on Si(111) at temperatures above 600 [degree]C. In contrast, microstructural characterization by transmission electron microscopy shows the formation of highly oriented polycrystalline wurtzitic aluminum nitride thin films on Si(001). Real-time substrate curvature measurements reveal the existence of large intrinsic stresses in aluminum nitride thin films grown on both Si(111) and Si(001) substrates.
- DOE Contract Number:
- W-31-109-ENG-38
- OSTI ID:
- 5158012
- Journal Information:
- Journal of Applied Physics; (United States), Vol. 75:7; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM NITRIDES
DEPOSITION
EPITAXY
ION CHANNELING
MICROSTRUCTURE
RAMAN SPECTRA
SPUTTERING
STRESSES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ALUMINIUM COMPOUNDS
CHANNELING
ELECTRON MICROSCOPY
FILMS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SPECTRA
360602* - Other Materials- Structure & Phase Studies