Core-level binding energies of Cs-doped C sub 60 and graphite

Journal Article · Thu Sep 05 00:00:00 EDT 1991 · Journal of Physical Chemistry; (United States)

DOI:https://doi.org/10.1021/j100171a004· OSTI ID:5157616

Kelty, S P; Lu, Zhong ^[1]; Lieber, C M ^[2]

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1. Columbia Univ., New York, NY (United States)
2. Harvard Univ., Cambridge, MA (United States)

The carbon core-level binding energies of C{sub 60} and Cs-doped C{sub 60} thin films and Cs-graphite intercalation compounds have been characterized by X-ray photoelectron spectroscopy. Thin films of C{sub 60} deposited on silicon and gold substrates exhibit systematic increases in the carbon core-level (C 1s) binding energy and peak width with Cs doping. At saturation coverage, which corresponds to a stoichiometry of Cs{sub 7.2}C{sub 60}, the binding energy shifts by 1.1 eV. The C 1s binding energy was also found to increase systematically in Cs-intercalated graphite where the maximum shift is 0.5 eV for a stoichiometry of Cs{sub 0.12}C. The observed increases in binding energy have been explained in terms of an increase in the Fermi level position as a result of Cs charge transfer to a delocalized C{sub 60} energy band.

• OSTI ID: 5157616
• Journal Information: Journal of Physical Chemistry; (United States), Vol. 95:18; ISSN 0022-3654
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
FULLERENES
X-RAY SPECTROSCOPY
GRAPHITE
BINDING ENERGY
CESIUM
CHEMICAL COMPOSITION
DOPED MATERIALS
FERMI LEVEL
GOLD
SILICON
STOICHIOMETRY
SUBSTRATES
THIN FILMS
ALKALI METALS
CARBON
ELEMENTAL MINERALS
ELEMENTS
ENERGY
ENERGY LEVELS
FILMS
MATERIALS
METALS
MINERALS
NONMETALS
SEMIMETALS
SPECTROSCOPY
TRANSITION ELEMENTS
400201* - Chemical & Physicochemical Properties