skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers

Abstract

Room-temperature continuous-wave oscillation with an emission power in excess of 1 mW was achieved in vertical-cavity surface-emitting lasers containing a 0.5-{mu}m-thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a hybrid metal DBR. The devices have a cw threshold current of 40 mA in 15-{mu}m-diam size and a {ital T}{sub 0} of 115 K. Fiber butt coupling and pseudorandom data modulation of these lasers with open eyes up to 500 Mbit/s were demonstrated.

Authors:
; ; ; ; ; ;  [1]
  1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)
Publication Date:
OSTI Identifier:
5139629
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (USA)
Additional Journal Information:
Journal Volume: 55:24; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; POWER; BRAGG REFLECTION; EXPERIMENTAL DATA; FABRICATION; GALLIUM ARSENIDES; LASER CAVITIES; LOW TEMPERATURE; MODULATION; OPERATION; OSCILLATION MODES; POWER RANGE MILLI W; STIMULATED EMISSION; THRESHOLD CURRENT; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; DATA; ELECTRIC CURRENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; INFORMATION; LASERS; NUMERICAL DATA; PNICTIDES; REFLECTION; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Tai, K, Fischer, R J, Seabury, C W, Olsson, N A, Huo, T D, Ota, Y, and Cho, A Y. Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers. United States: N. p., 1989. Web. doi:10.1063/1.102002.
Tai, K, Fischer, R J, Seabury, C W, Olsson, N A, Huo, T D, Ota, Y, & Cho, A Y. Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers. United States. doi:10.1063/1.102002.
Tai, K, Fischer, R J, Seabury, C W, Olsson, N A, Huo, T D, Ota, Y, and Cho, A Y. Mon . "Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers". United States. doi:10.1063/1.102002.
@article{osti_5139629,
title = {Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers},
author = {Tai, K and Fischer, R J and Seabury, C W and Olsson, N A and Huo, T D and Ota, Y and Cho, A Y},
abstractNote = {Room-temperature continuous-wave oscillation with an emission power in excess of 1 mW was achieved in vertical-cavity surface-emitting lasers containing a 0.5-{mu}m-thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a hybrid metal DBR. The devices have a cw threshold current of 40 mA in 15-{mu}m-diam size and a {ital T}{sub 0} of 115 K. Fiber butt coupling and pseudorandom data modulation of these lasers with open eyes up to 500 Mbit/s were demonstrated.},
doi = {10.1063/1.102002},
journal = {Applied Physics Letters; (USA)},
issn = {0003-6951},
number = ,
volume = 55:24,
place = {United States},
year = {1989},
month = {12}
}