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Title: Low-noise CMOS preamplifier-shaper for silicon drift detectors

Abstract

We have designed a 16-channel preamplifier-shaper for particle tracking using silicon drift detectors (SDD). The preamplifier, which is optimized for a detector capacitance of 0.2 - 0.8 pF, uses two new circuit techniques to achieve a low noise (ENC 120 e- + 62 e-/pF), high linearity (< 0.5% to 50 fC), and good tolerance to process variations and temperature and power supply fluctuations. The circuit is continuously sensitive, has no digital signals on chip, and requires no external components or critical adjustments. The peaking time of the shaper is 50 nsec and the power dissipation, including an off-chip driver, is 6.5 mW/channel. The circuit is fabricated in 1.2 um CMOS and can accommodate detector leakage currents of up to 1.5 uA. Although the circuit was developed for use with particle tracking detectors, these techniques are also well-suited for the design of lower-noise preamplifiers for high-resolution X-ray spectroscopy systems.

Authors:
 [1]; ;  [2];  [3]
  1. Brookhaven National Lab., Upton, NY (United States)
  2. Politecnico di Bari (Italy)
  3. Wayne State Univ., Detroit, MI (United States)
Publication Date:
OSTI Identifier:
512999
Report Number(s):
CONF-961123-
TRN: 97:014059
Resource Type:
Conference
Resource Relation:
Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Anaheim, CA (United States), 2-9 Nov 1996; Other Information: PBD: 1996; Related Information: Is Part Of 1996 IEEE nuclear science symposium - conference record. Volumes 1, 2 and 3; Del Guerra, A. [ed.]; PB: 2138 p.
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; 44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; PREAMPLIFIERS; DESIGN; SI SEMICONDUCTOR DETECTORS; READOUT SYSTEMS; MOSFET; PARTICLE TRACKS; X-RAY SPECTROSCOPY

Citation Formats

Gramegna, G, O`Connor, P, Rehak, P, and Hart, S. Low-noise CMOS preamplifier-shaper for silicon drift detectors. United States: N. p., 1996. Web.
Gramegna, G, O`Connor, P, Rehak, P, & Hart, S. Low-noise CMOS preamplifier-shaper for silicon drift detectors. United States.
Gramegna, G, O`Connor, P, Rehak, P, and Hart, S. 1996. "Low-noise CMOS preamplifier-shaper for silicon drift detectors". United States.
@article{osti_512999,
title = {Low-noise CMOS preamplifier-shaper for silicon drift detectors},
author = {Gramegna, G and O`Connor, P and Rehak, P and Hart, S},
abstractNote = {We have designed a 16-channel preamplifier-shaper for particle tracking using silicon drift detectors (SDD). The preamplifier, which is optimized for a detector capacitance of 0.2 - 0.8 pF, uses two new circuit techniques to achieve a low noise (ENC 120 e- + 62 e-/pF), high linearity (< 0.5% to 50 fC), and good tolerance to process variations and temperature and power supply fluctuations. The circuit is continuously sensitive, has no digital signals on chip, and requires no external components or critical adjustments. The peaking time of the shaper is 50 nsec and the power dissipation, including an off-chip driver, is 6.5 mW/channel. The circuit is fabricated in 1.2 um CMOS and can accommodate detector leakage currents of up to 1.5 uA. Although the circuit was developed for use with particle tracking detectors, these techniques are also well-suited for the design of lower-noise preamplifiers for high-resolution X-ray spectroscopy systems.},
doi = {},
url = {https://www.osti.gov/biblio/512999}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {12}
}

Conference:
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