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Title: Knife-edge thin film field emission cathodes on (110) silicon wafers

Abstract

In the effort to develop a high performance field emission cathode for application in microwave amplifiers, it is clear that the emitter structure should have a sharp emitter surface, a large emitter height, a small gate opening size, and a small emitter angle. We have developed a technique that fabricates knife-edge field emission arrays (KEFEA) on (110) silicon wafers. KEFEA has an optimized structure meeting the requirements mentioned above. The emitter edge radius is about 250 A or less, the emitter height is 8 [mu]m, and the gate gap is [similar to]0.2 [mu]m. Experiments have exhibited Fowler--Nordheim type field emission with gate-to-substrate bias voltage less than 50 V.

Authors:
; ; ; ; ;  [1]
  1. (Department of Physics, Texas A M University, College Station, Texas 77843-4242 (United States))
Publication Date:
OSTI Identifier:
5125344
DOE Contract Number:  
FG02-91ER40613
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
Additional Journal Information:
Journal Volume: 12:2; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Ta; ELECTRON SOURCES; CATHODES; SILICON; THIN FILMS; FABRICATION; FIELD EMISSION; FOWLER-NORDHEIM THEORY; TESTING; ELECTRODES; ELEMENTS; EMISSION; FILMS; PARTICLE SOURCES; RADIATION SOURCES; SEMIMETALS; 661220* - Particle Beam Production & Handling; Targets- (1992-)

Citation Formats

Lee, B., Elliott, T.S., Mazumdar, T.K., McIntyre, P.M., Pang, Y., and Trost, H.J. Knife-edge thin film field emission cathodes on (110) silicon wafers. United States: N. p., 1994. Web. doi:10.1116/1.587404.
Lee, B., Elliott, T.S., Mazumdar, T.K., McIntyre, P.M., Pang, Y., & Trost, H.J. Knife-edge thin film field emission cathodes on (110) silicon wafers. United States. doi:10.1116/1.587404.
Lee, B., Elliott, T.S., Mazumdar, T.K., McIntyre, P.M., Pang, Y., and Trost, H.J. Tue . "Knife-edge thin film field emission cathodes on (110) silicon wafers". United States. doi:10.1116/1.587404.
@article{osti_5125344,
title = {Knife-edge thin film field emission cathodes on (110) silicon wafers},
author = {Lee, B. and Elliott, T.S. and Mazumdar, T.K. and McIntyre, P.M. and Pang, Y. and Trost, H.J.},
abstractNote = {In the effort to develop a high performance field emission cathode for application in microwave amplifiers, it is clear that the emitter structure should have a sharp emitter surface, a large emitter height, a small gate opening size, and a small emitter angle. We have developed a technique that fabricates knife-edge field emission arrays (KEFEA) on (110) silicon wafers. KEFEA has an optimized structure meeting the requirements mentioned above. The emitter edge radius is about 250 A or less, the emitter height is 8 [mu]m, and the gate gap is [similar to]0.2 [mu]m. Experiments have exhibited Fowler--Nordheim type field emission with gate-to-substrate bias voltage less than 50 V.},
doi = {10.1116/1.587404},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)},
issn = {0734-211X},
number = ,
volume = 12:2,
place = {United States},
year = {1994},
month = {3}
}