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Title: Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report

Abstract

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

Authors:
Research Org.:
Commission of the European Communities, Luxembourg
OSTI Identifier:
5121753
Report Number(s):
PB-82-192808; EUR-7096-EN
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SCHOTTKY BARRIER SOLAR CELLS; PHASE STABILITY; SILICON; EPITAXY; SILICON SOLAR CELLS; DOPED MATERIALS; IMPURITIES; NICKEL SILICIDES; ORIENTATION; PALLADIUM SILICIDES; PLATINUM SILICIDES; SUBSTRATES; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; MATERIALS; NICKEL COMPOUNDS; PALLADIUM COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PLATINUM COMPOUNDS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; STABILITY; TRANSITION ELEMENT COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360603 - Materials- Properties

Citation Formats

Canali, C. Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report. United States: N. p., Web.
Canali, C. Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report. United States.
Canali, C. . "Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report". United States.
@article{osti_5121753,
title = {Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report},
author = {Canali, C},
abstractNote = {The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.},
doi = {},
url = {https://www.osti.gov/biblio/5121753}, journal = {},
number = ,
volume = ,
place = {United States},
year = {},
month = {}
}

Technical Report:
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