Interpretation of the scanning tunneling and atomic force microscopy images of layered compound TlSbSe[sub 2] by electron density calculations

Journal Article · Thu Jul 01 00:00:00 EDT 1993 · Chemistry of Materials; (United States)

DOI:https://doi.org/10.1021/cm00031a024· OSTI ID:5113249

Ren, J; Whangbo, M H ^[1]; Bengel, H; Cantow, H J; Magonov, S N ^[2]

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1. North Carolina State Univ., Raleigh, NC (United States)
2. Albert-Ludwigs Univ., Freiburg (Germany)

Atomic-scale scanning tunneling microscopy (STM) and atomic force microscopy (AFM) images were obtained for layered compound TlSbSe[sub 2]. This compound consists of two slightly different SlSbSe[sub 2] layers, and the surfaces of these layers have three different atoms. The observed STM and AFM images were analyzed by calculating the partial electron density p-(r[sub o],e[sub f]) and the total electron density p(r[sub o]) of individual TlSbSe[sub 2] layers. In both STM and AFM images, the brightest spots are associated with the most protruded surface atoms, i.e., the Tl atoms. For various bias voltages employed, there occurs no atom-selective imaging in the STM images. 12 refs., 8 figs., 3 tabs.

• DOE Contract Number: FG05-86ER45259
• OSTI ID: 5113249
• Journal Information: Chemistry of Materials; (United States), Vol. 5:7; ISSN 0897-4756
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY SELENIDES
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SELENIDES
SELENIUM COMPOUNDS
THALLIUM COMPOUNDS
360602* - Other Materials- Structure & Phase Studies