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Title: Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 03, December 1, 1979-February 29, 1980

Abstract

The survey of Si precursors leading to electrodeposition of Si in organic solvents was extended this quarter to cover SiCl/sub 4/, (ClC/sub 3/H/sub 6/)SiCl/sub 3/, and Si(OEt)/sub 4/. Plating experiments with SiHCL/sub 3/ solutions in propylene carbonate with 0.1M tetrabutylammonium tetrafluoroborate were continued. Silicon was deposited on ITO glass (Nesatron) as well as Mo substrates at temperatures from 25-80/sup 0/C. Both potentiostatic and galvanostatic conditions were used. The high resistance of the films (10/sup 6/-10/sup 8/ ..cap omega..-cm) limited the thickness which could be deposited by either method to less than 5 ..mu..m. X-ray analysis of the films confirmed that they were amorphous. SEM analysis of the films revealed a very porous structure with nodules about 1 ..mu..m in diameter. Annealing the deposit at 400/sup 0/C in an Ar:H/sub 2/ atmosphere resulted in a slightly smoother surface but the nodules remained. The films deposited on ITO glass had a band gap of about 1.0 eV and an EO/sub 4/ value of 1.5-2.0 eV. The Auger analysis of the films showed the presence of large amounts of oxygen in the samples that had been exposed to air. The first silicon deposits were obtained from the high temperature fluoride molten salts. Platingmore » on a platinum cathode resulted in silicide formation which suggests a method of making a PtSi alloy for use as a stable reference electrode in the fluoride melts containing silicon (IV). Galvanostatic deposition on silver substrates in general gave thick, uneven, and poorly adherent deposits.« less

Authors:
; ; ; ;
Publication Date:
Research Org.:
EIC Corp., Newton, MA (USA)
OSTI Identifier:
5112422
Report Number(s):
DOE/ET/23046-3
DOE Contract Number:  
AC03-79ET23046
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; ELECTRODEPOSITION; AMORPHOUS STATE; AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTIONS; ELECTROCHEMISTRY; ELECTRODEPOSITED COATINGS; ELECTROPLATING; IMPURITIES; MICROSTRUCTURE; MOLTEN SALTS; ORGANIC SOLVENTS; POLYCRYSTALS; PRECURSOR; QUANTITATIVE CHEMICAL ANALYSIS; RESEARCH PROGRAMS; SILANES; SILICON CHLORIDES; SILICON SOLAR CELLS; CHEMICAL ANALYSIS; CHEMISTRY; CHLORIDES; CHLORINE COMPOUNDS; COATINGS; CRYSTAL STRUCTURE; CRYSTALS; DEPOSITION; DIRECT ENERGY CONVERTERS; ELECTROLYSIS; ELECTRON SPECTROSCOPY; ELEMENTS; EQUIPMENT; HALIDES; HALOGEN COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; LYSIS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PLATING; SALTS; SEMIMETALS; SILICON COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; SOLVENTS; SPECTROSCOPY; SURFACE COATING; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Rauh, R D, Rose, T L, Boudreau, R A, Hoover, T O, and Natwig, D L. Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 03, December 1, 1979-February 29, 1980. United States: N. p., 1980. Web.
Rauh, R D, Rose, T L, Boudreau, R A, Hoover, T O, & Natwig, D L. Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 03, December 1, 1979-February 29, 1980. United States.
Rauh, R D, Rose, T L, Boudreau, R A, Hoover, T O, and Natwig, D L. Tue . "Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 03, December 1, 1979-February 29, 1980". United States.
@article{osti_5112422,
title = {Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 03, December 1, 1979-February 29, 1980},
author = {Rauh, R D and Rose, T L and Boudreau, R A and Hoover, T O and Natwig, D L},
abstractNote = {The survey of Si precursors leading to electrodeposition of Si in organic solvents was extended this quarter to cover SiCl/sub 4/, (ClC/sub 3/H/sub 6/)SiCl/sub 3/, and Si(OEt)/sub 4/. Plating experiments with SiHCL/sub 3/ solutions in propylene carbonate with 0.1M tetrabutylammonium tetrafluoroborate were continued. Silicon was deposited on ITO glass (Nesatron) as well as Mo substrates at temperatures from 25-80/sup 0/C. Both potentiostatic and galvanostatic conditions were used. The high resistance of the films (10/sup 6/-10/sup 8/ ..cap omega..-cm) limited the thickness which could be deposited by either method to less than 5 ..mu..m. X-ray analysis of the films confirmed that they were amorphous. SEM analysis of the films revealed a very porous structure with nodules about 1 ..mu..m in diameter. Annealing the deposit at 400/sup 0/C in an Ar:H/sub 2/ atmosphere resulted in a slightly smoother surface but the nodules remained. The films deposited on ITO glass had a band gap of about 1.0 eV and an EO/sub 4/ value of 1.5-2.0 eV. The Auger analysis of the films showed the presence of large amounts of oxygen in the samples that had been exposed to air. The first silicon deposits were obtained from the high temperature fluoride molten salts. Plating on a platinum cathode resulted in silicide formation which suggests a method of making a PtSi alloy for use as a stable reference electrode in the fluoride melts containing silicon (IV). Galvanostatic deposition on silver substrates in general gave thick, uneven, and poorly adherent deposits.},
doi = {},
url = {https://www.osti.gov/biblio/5112422}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {7}
}

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