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Title: Laser deposition and laser modification of high-temperature superconducting thin films

Conference ·
OSTI ID:5097649

Applications of high-temperature superconductors (HTSC) may require epitaxial films with {Tc}{ge}77 K, and J{sub c}{ge}10{sup 6} A/cm{sup 2}. In situ pulsed laser deposition (PLD) is suitable for fabrication of such films. We report parametric studies on the effect of laser and processing parameters on the crystallinity, epitaxy and electrical properties of laser-deposited HTSC thin films. In addition, several laser-based processes were used to modify the electrical properties ({Tc} and J{sub c}) of PLD thin films. A direct-write laser heating (1.06 {mu}m at {approx}0.5 kW/cm{sup 2} for {approx}5 min) process in an oxygen atmosphere at {approx}590 Torr was shown to selectivity regenerate high-{Tc} material in microscopic domains from films that were partially deoxygenated. In separate work, electrical responses and crystallinity of HTSC films were measured as a function of excimer laser exposure using fluences in the range 20--150 mJ/cm{sup 2}. The critical current and boundary layer could be modified with a high degree of accuracy. 17 refs., 4 figs.

Research Organization:
Los Alamos National Lab., NM (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
5097649
Report Number(s):
LA-UR-91-3463; CONF-911047-8; ON: DE92002518
Resource Relation:
Conference: 180. meeting of the Electrochemical Society, Phoenix, AZ (United States), 13-18 Oct 1991
Country of Publication:
United States
Language:
English