Embedded stripe DH laser monolithically integrated with a strip waveguide

Journal Article · Wed Mar 01 00:00:00 EST 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325039· OSTI ID:5091861

Itoh, K; Ishikawa, K; Teramoto, I

Monolithic integration is described of an embedded stripe DH laser with an embedded strip waveguide of vapor-phase-grown GaAsP. The waveguide is composed of high-resistivity GaAs/sub 0.9/P/sub 0.1/ and surrounded by GaAs/sub 0.85/P/sub 0.15/, whose refractive index is slightly lower, to provide the optical confinement in both directions parallel and perpendicular to the guide plane. The intensity modulation of the output light was efficiently achieved by applying an electric field to the waveguide.

• Research Organization: Research Laboratory, Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
• OSTI ID: 5091861
• Journal Information: J. Appl. Phys.; (United States), Vol. 49:3
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
MODULATION
ELECTRIC FIELDS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INTEGRATED CIRCUITS
REFRACTIVITY
THRESHOLD ENERGY
WAVEGUIDES
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC CIRCUITS
ENERGY
GALLIUM COMPOUNDS
LASERS
MICROELECTRONIC CIRCUITS
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)