Metal ion implantation: Conventional versus immersion

Journal Article · Tue Mar 01 00:00:00 EST 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.587353· OSTI ID:5090863

Brown, I G; Anders, A; Anders, S; Dickinson, M R; MacGill, R A ^[1]

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1. Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)

Vacuum-arc-produced metal plasma can be used as the ion feedstock material in an ion source for doing conventional metal ion implantation, or as the immersing plasma for doing plasma immersion ion implantation. The basic plasma production method is the same in both cases; it is simple and efficient and can be used with a wide range of metals. Vacuum arc ion sources of different kinds have been developed by the authors and others and their suitability as a metal ion implantation tool has been well established. Metal plasma immersion surface processing is an emerging tool whose characteristics and applications are the subject of present research. There are a number of differences between the two techniques, both in the procedures used and in the modified surfaces created. For example, the condensibility of metal plasma results in thin film formation and subsequent energetic implantation is thus done through the deposited layer; in the usual scenario, this recoil implantation and the intermixing it produces is a feature of metal plasma immersion but not of conventional energetic ion implantation. Metal plasma immersion is more suited (but not limited) to higher doses ([gt]10[sup 17] cm[sup [minus]2]) and lower energies ([ital E][sub [ital i]][lt]tens of keV) than the usual ranges of conventional metal ion implantation. These and other differences provide these vacuum-arc-based surface modification tools with a versatility that enhances the overall technological attractiveness of both.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5090863
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 12:2; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
47 OTHER INSTRUMENTATION
ION IMPLANTATION
COMPARATIVE EVALUATIONS
ELECTRIC ARCS
ENERGY DEPOSITION
ION SOURCES
PLASMA
REVIEWS
SURFACE TREATMENTS
CURRENTS
DOCUMENT TYPES
ELECTRIC CURRENTS
ELECTRIC DISCHARGES
EVALUATION
665300* - Interactions Between Beams & Condensed Matter- (1992-)
440800 - Miscellaneous Instrumentation- (1990-)