Strain stabilized metal{endash}insulator transition in epitaxial thin films of metallic oxide CaRuO{sub 3}
- Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708 (United States)
- Lucent Technology/Bell Laboratories, Murray Hill, New Jersey 07974 (United States)
- Department of Physics, University of Virginia, Charlottesville, Virginia 22903 (United States)
We report the observation of both metallic and semiconducting behavior in epitaxial thin films of the metallic oxide CaRuO{sub 3} deposited under identical conditions. X-ray diffraction studies showed that while semiconducting films with enlarged unit cells were obtained on single-crystal (100) SrTiO{sub 3} substrates, metallic films with lattice parameters close to the bulk material grew on (100) LaAlO{sub 3} substrates and poor crystalline quality SrTiO{sub 3} substrates. It is believed that a strain induced substitution of the small Ru{sup 4+} cations by the larger Ca{sup 2+} cations occurs, breaking the conduction pathway within the three-dimensional network of the RuO{sub 6} octahedra and leading to a metal{endash}insulator transition. This unique phenomenon, which is not observed in bulk material, can be significant in technologically important epitaxial perovskite oxide heterostructures. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 508930
- Journal Information:
- Applied Physics Letters, Vol. 70, Issue 22; Other Information: PBD: Jun 1997
- Country of Publication:
- United States
- Language:
- English
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