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Title: Photoelectrochemical oxidation of aromatic hydrocarbons and decamethyl ferrocene at the n-GaAs/room temperature molten salt electrolyte interface

Abstract

Photoelectrochemical (PEC) oxidation of decamethyl ferrocene ((/eta//sup 5/-(CH/sub 3/)/sub 5/C/sub 5/)/sub 2/Fe), benzo (a) pyrene (BP), 9, 10-diphenylanthracene (DPA), anthracene (A), and hexamethyl benzene (HMB) on n-GaAs electrodes in contact with the aluminum chloride-n-butyl pyridinium chloride (AlCl/sub 3/-BPC) molten salt electrolyte, was studied by cyclic and linear sweep voltammetry. In the case of DPA and A, evidence from cyclic voltammetry indicated photooxidation to the dication, probably caused by injection of an electron from the cation radical into the conduction band in n-GaAs. The location of the reduction waves on n-GaAs in the cyclic voltammograms for BP, DPA, and A further indicated a second set of surface states situated very close to the valence bandedge. Linear sweep voltammograms on n-GaAs in the dark and under illumination showed the usual rectification behavior associated with n-type semiconductor/electrolye junctions. 16 refs.

Authors:
;
Publication Date:
Research Org.:
Colo State Univ, Fort Collins
OSTI Identifier:
5086785
Resource Type:
Journal Article
Journal Name:
J. Electrochem. Soc.; (United States)
Additional Journal Information:
Journal Volume: 129:3
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; AROMATICS; OXIDATION; FERROCENE; PHOTOELECTROCHEMICAL CELLS; ELECTRODES; ELECTROLYTES; ALUMINIUM CHLORIDES; ANTHRACENE; BENZENE; BENZOPYRENE; CARBON; GALLIUM ARSENIDES; MOLTEN SALTS; PYRIDINIUM COMPOUNDS; VOLTAMETRY; ALUMINIUM COMPOUNDS; AMINES; AMMONIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; AZINES; CHEMICAL REACTIONS; CHLORIDES; CHLORINE COMPOUNDS; COMPLEXES; CONDENSED AROMATICS; DIENES; ELECTROCHEMICAL CELLS; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HETEROCYCLIC COMPOUNDS; HYDROCARBONS; IRON COMPLEXES; NONMETALS; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; PNICTIDES; POLYENES; PYRIDINES; QUATERNARY COMPOUNDS; SALTS; SOLAR EQUIPMENT; TRANSITION ELEMENT COMPLEXES; 140505* - Solar Energy Conversion- Photochemical, Photobiological, & Thermochemical Conversion- (1980-)

Citation Formats

Thapar, R, and Rajeshwar, K. Photoelectrochemical oxidation of aromatic hydrocarbons and decamethyl ferrocene at the n-GaAs/room temperature molten salt electrolyte interface. United States: N. p., 1982. Web. doi:10.1149/1.2123908.
Thapar, R, & Rajeshwar, K. Photoelectrochemical oxidation of aromatic hydrocarbons and decamethyl ferrocene at the n-GaAs/room temperature molten salt electrolyte interface. United States. https://doi.org/10.1149/1.2123908
Thapar, R, and Rajeshwar, K. Mon . "Photoelectrochemical oxidation of aromatic hydrocarbons and decamethyl ferrocene at the n-GaAs/room temperature molten salt electrolyte interface". United States. https://doi.org/10.1149/1.2123908.
@article{osti_5086785,
title = {Photoelectrochemical oxidation of aromatic hydrocarbons and decamethyl ferrocene at the n-GaAs/room temperature molten salt electrolyte interface},
author = {Thapar, R and Rajeshwar, K},
abstractNote = {Photoelectrochemical (PEC) oxidation of decamethyl ferrocene ((/eta//sup 5/-(CH/sub 3/)/sub 5/C/sub 5/)/sub 2/Fe), benzo (a) pyrene (BP), 9, 10-diphenylanthracene (DPA), anthracene (A), and hexamethyl benzene (HMB) on n-GaAs electrodes in contact with the aluminum chloride-n-butyl pyridinium chloride (AlCl/sub 3/-BPC) molten salt electrolyte, was studied by cyclic and linear sweep voltammetry. In the case of DPA and A, evidence from cyclic voltammetry indicated photooxidation to the dication, probably caused by injection of an electron from the cation radical into the conduction band in n-GaAs. The location of the reduction waves on n-GaAs in the cyclic voltammograms for BP, DPA, and A further indicated a second set of surface states situated very close to the valence bandedge. Linear sweep voltammograms on n-GaAs in the dark and under illumination showed the usual rectification behavior associated with n-type semiconductor/electrolye junctions. 16 refs.},
doi = {10.1149/1.2123908},
url = {https://www.osti.gov/biblio/5086785}, journal = {J. Electrochem. Soc.; (United States)},
number = ,
volume = 129:3,
place = {United States},
year = {1982},
month = {3}
}