Uniformity of quantum well heterostructure GaAlAs lasers grown by metalorganic chemical vapor deposition
The threshold current density, laser wavelength, grown layer thickness, reverse breakdown voltage, and far-field radiation pattern as a function of position on the grown wafer are reported for broad area multiple quantum well GaAlAs heterostructure lasers grown by metalorganic chemical vapor deposition. It is found that the layer thickness varies across a 1.5-in. sample by as much as 20% at the outer edges of the water, leading to a lasing wavelength shift of as much as 150 A owing to the quantum size effect. It is shown that this thickness variation has only a small effect on the threshold current density across the water such that the uniformity of threshold current density is comparable to that reported previously for molecular beam epitaxy-grown conventional double heterostructure lasers.
- Research Organization:
- Xerox Palo Alto Research Centers, Palo Alto, California 94303
- OSTI ID:
- 5076435
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 41:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
CRYSTAL GROWTH
BREAKDOWN
CURRENT DENSITY
HETEROJUNCTIONS
LAYERS
ORGANOMETALLIC COMPOUNDS
THICKNESS
WAVELENGTHS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
DIMENSIONS
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
ORGANIC COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)