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Title: Development of passive electronic components for instrumentation of improved geothermal logging tools and components. Semiannual progress report. Report No. 1. [For temperatures up to 500/sup 0/C]

Technical Report ·
DOI:https://doi.org/10.2172/5063302· OSTI ID:5063302

Research progress is reported on the development of passive components, resistors, capacitors, metallization, and passivation, that will withstand well logging temperatures to 500/sup 0/C and have extremely low temperature coefficients. The lower the temperature coefficients, the more exacting the instrumentation designs can be without elaborate compensation techniques. The method of fabricating the thin film components is that of chemical vapor deposition (CVD) which is a major deviation from the standard approach. The films are grown in a CVD reactor by passing various reactant gases over a heated substrate. The reactor was modified in order to accommodate the gases needed in the deposition of metals. The reactor can be operated over a temperature range of 400/sup 0/C to greater than 1200/sup 0/C, and at any pressure between atmospheric and 1 x 10/sup -3/ torr. Tungsten, tungsten-silicon, and silicon nitride were successfully deposited on oxidized silicon wafers. The tungsten is used for interconnects and capacitor plates, tungsten-silicon is used as a high resistivity material for resistors, and silicon nitride is used as a dielectric for the capacitors and as a passivation layer. The materials are currently being studied in terms of their deposition parameters and electrical characteristics.

Research Organization:
Arizona Univ., Tucson (USA). Solid State Engineering Lab.
DOE Contract Number:
EY-76-S-02-4081
OSTI ID:
5063302
Report Number(s):
COO-4081-1
Country of Publication:
United States
Language:
English