Interfacial reactions between metal and gallium arsenide

Journal Article · Sun Oct 01 00:00:00 EDT 1989 · Journal of the Electrochemical Society; (USA)

DOI:https://doi.org/10.1149/1.2096392· OSTI ID:5060880

Lin, J C; Schulz, K J; Hsieh, K C; Chang, Y A ^[1]

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1. Dept. of Materials Science and Engineering, Univ. of Wisconsin, Madison, WI (US)

The phase formation sequence for GaAs/metal ternary diffusion couples is discussed. The diffusion path concept is introduced and is used with the phase diagram to understand interfacial reactions between GaAs and metal. The correlation between growth kinetics and interface morphology is discussed. Studies of bulk and thin film couples in two systems, GaAs/Pd and GaAs/Pt, are given to illustrate these concepts.

• OSTI ID: 5060880
• Journal Information: Journal of the Electrochemical Society; (USA), Vol. 136:10; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CHEMICAL REACTION KINETICS
PALLADIUM
PLATINUM
TERNARY ALLOY SYSTEMS
PHASE DIAGRAMS
CRYSTAL GROWTH METHODS
DIFFUSION
INTERFACES
MORPHOLOGY
THIN FILMS
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
DIAGRAMS
ELEMENTS
FILMS
GALLIUM COMPOUNDS
KINETICS
METALS
PLATINUM METALS
PNICTIDES
REACTION KINETICS
TRANSITION ELEMENTS
360102* - Metals & Alloys- Structure & Phase Studies
360602 - Other Materials- Structure & Phase Studies