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Title: A photoemission electron microscope investigation of chemical vapor deposition diamond films and diamond nucleation

Miscellaneous ·
OSTI ID:50584

CVD diamond nucleation is investigated using the hot filament technique. The stability of CVD diamond at elevated temperatures in vacuum, O{sub 2}, and atomic hydrogen environments are studied using photoemission electron microscopy (PEEM) combined with in-vacuo x-ray photoelectron spectroscopy (XPS). Dissolution, oxidation, and atomic hydrogen etching processes of CVD diamond are observed in real-time. Low field cold electron emission from CVD diamond films has been observed for the first time by PEEM. Nucleation density Mo substrates could be increased from 10{sup 4} to 10{sup 8}/cm{sup 2} by polishing. Heating the substrate to 870{degrees}C in vacuum prior to deposition, or above 1000{degrees}C at the beginning of deposition, reduced nucleation by more than 100-fold. Reduction in nucleation sites is attributed to annealing. Nucleation on Mo{sub 2}C substrates was found to be very poor (10{sup 4}/cm{sup 2}), which shows carbide alone does not promote nucleation. Carbide formation may remove nucleation sites. CVD diamond was found to dissolve into the Mo substrate in vacuum at about 1200{degrees}C. XPS showed formation of Mo{sub 2}C when the diamond dissolved. Diamond oxidation to gas phase products occurred directly at about 600{degrees}C, with no observable participation by the substrate. No detectable etching by atomic hydrogen at a pressure 1 {times} 10{sup {minus}4} torr was observed. Boron doped and `pure` CVD diamond films were found to emit electrons at room temperature under the action of the accelerating electric field of the PEEM (about 30 kV/cm) without photon excitation. The mechanism underlying this phenomenon was investigated with PEEM and by studying the emission current-vs-voltage characteristics of the CVD diamond films. Morphology and crystalline orientation were found to play only a minor role. Impurities in the CVD diamond structure lowers the potential barrier substantially; tunneling of electrons into the vacuum is facile.

Research Organization:
Ohio Univ., Athens, OH (United States)
OSTI ID:
50584
Resource Relation:
Other Information: TH: Thesis (Ph.D.); PBD: 1993
Country of Publication:
United States
Language:
English

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