Raman scattering study of InAs/GaInSb strained layer superlattices

Sela, I; Campbell, I H; Laurich, B K; Smith, D L; Samoska, L A; Bolognesi, C R; Gossard, A C; Kroemer, H

doi:10.1063/1.350174

Title: Raman scattering study of InAs/GaInSb strained layer superlattices

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Abstract

We present a Raman scattering study of the InAs/GaInSb superlattice. This new superlattice is promising as a long wavelength infrared detector material. The samples were grown by molecular beam epitaxy and their structural parameters were determined by Rutherford backscattering and x-ray diffraction. Samples were grown on (001) GaAs substrates with GaSb buffers, and directly on (001) GaSb substrates. Cross-sectional transmission electron micrographs show that for the samples grown on GaAs substrates, a high density of dislocations was generated at the GaAs-GaSb interface, and many of these dislocations thread through the superlattice. The samples grown directly on GaSb had a much lower dislocation density. The Raman spectra of the InAs/GaInSb superlattice shows a single peak, which is a superposition of scattering from the LO phonons in InAs and in GaInSb. For unstrained InAs and GaInSb, the LO phonon energies are sufficiently separated that they would be well resolved in Raman scattering. However, the strain introduced into these materials by the pseudomorphic boundary conditions moves the two phonons closer together energetically so that only one peak is seen in the Raman spectrum of the superlattice. A high energy Raman scattering tail is seen in some of the samples. This tail is frommore »« less

Authors:

Sela, I; Campbell, I H; Laurich, B K; Smith, D L ^[1]; Samoska, L A; Bolognesi, C R; Gossard, A C; Kroemer, H ^[2]

Los Alamos National Laboratory, Los Alamos, New Mexico (USA)
Electrical and Computer Engineering, and Engineering Materials Departments, University of California at Santa Barbara, Santa Barbara, California (USA)

Publication Date:: Fri Nov 15 00:00:00 EST 1991

OSTI Identifier:: 5049856

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics; (United States)

Additional Journal Information:: Journal Volume: 70:10; Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; GALLIUM ANTIMONIDES; RAMAN SPECTROSCOPY; INDIUM ANTIMONIDES; INDIUM ARSENIDES; DISLOCATIONS; MOLECULAR BEAM EPITAXY; PHONONS; STRAINS; SUPERLATTICES; ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASER SPECTROSCOPY; LINE DEFECTS; PNICTIDES; QUASI PARTICLES; SPECTROSCOPY; 360603* - Materials- Properties; 360601 - Other Materials- Preparation & Manufacture

Citation Formats


                    Sela, I, Campbell, I H, Laurich, B K, Smith, D L, Samoska, L A, Bolognesi, C R, Gossard, A C, and Kroemer, H. Raman scattering study of InAs/GaInSb strained layer superlattices.  United States: N. p., 1991. 
        Web.  doi:10.1063/1.350174.

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                    Sela, I, Campbell, I H, Laurich, B K, Smith, D L, Samoska, L A, Bolognesi, C R, Gossard, A C, & Kroemer, H. Raman scattering study of InAs/GaInSb strained layer superlattices.  United States.  https://doi.org/10.1063/1.350174

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                    Sela, I, Campbell, I H, Laurich, B K, Smith, D L, Samoska, L A, Bolognesi, C R, Gossard, A C, and Kroemer, H. 1991.  
        "Raman scattering study of InAs/GaInSb strained layer superlattices".  United States.  https://doi.org/10.1063/1.350174.

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@article{osti_5049856,

  title        = {Raman scattering study of InAs/GaInSb strained layer superlattices},

  author       = {Sela, I and Campbell, I H and Laurich, B K and Smith, D L and Samoska, L A and Bolognesi, C R and Gossard, A C and Kroemer, H},

  abstractNote = {We present a Raman scattering study of the InAs/GaInSb superlattice. This new superlattice is promising as a long wavelength infrared detector material. The samples were grown by molecular beam epitaxy and their structural parameters were determined by Rutherford backscattering and x-ray diffraction. Samples were grown on (001) GaAs substrates with GaSb buffers, and directly on (001) GaSb substrates. Cross-sectional transmission electron micrographs show that for the samples grown on GaAs substrates, a high density of dislocations was generated at the GaAs-GaSb interface, and many of these dislocations thread through the superlattice. The samples grown directly on GaSb had a much lower dislocation density. The Raman spectra of the InAs/GaInSb superlattice shows a single peak, which is a superposition of scattering from the LO phonons in InAs and in GaInSb. For unstrained InAs and GaInSb, the LO phonon energies are sufficiently separated that they would be well resolved in Raman scattering. However, the strain introduced into these materials by the pseudomorphic boundary conditions moves the two phonons closer together energetically so that only one peak is seen in the Raman spectrum of the superlattice. A high energy Raman scattering tail is seen in some of the samples. This tail is from Ga-As local modes. Such modes may be due to As incorporation in the GaInSb, Ga incorporation in the InAs or phase mixing at the interfaces.},

  doi          = {10.1063/1.350174},

  url          = {https://www.osti.gov/biblio/5049856},
  journal      = {Journal of Applied Physics; (United States)},

  issn         = {0021-8979},

  number       = ,

  volume       = 70:10,

  place        = {United States},

  year         = {Fri Nov 15 00:00:00 EST 1991},

  month        = {Fri Nov 15 00:00:00 EST 1991}

}

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