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Title: Electromagnetic radiation detectors

Patent ·
OSTI ID:5048977

A photoconductive semiconductor device is described comprising: a substrate; a first layer of electromagnetic radiation sensitive semiconductor material of a given conductivity type and having a first energy bandgap on the substrate; a first region of a second layer of semiconductor material of the same conductivity type as the first layer of semiconductor material, but having a second energy bandgap greater than the first bandgap, and in electrical contact with the first layer; and a first ohmic contact means on and in electrical communication with the region of the second layer of semiconductor material and adapted to be connected to a first conductor of an external source of electrical voltage in a manner such that the ohmic contact will attract minority carriers; a second ohmic contact means on and in electrical communication with either the first or the second layer of semiconductor material and adapted to be connected to a second conductor of the external source of electrical voltage of opposite polarity to the first contact of the external source of electrical voltage; and wherein the first and second ohmic contact means on the semiconductor material are spaced from each other a sufficient distance such that external electromagnetic radiation may be sensed in the space therebetween.

Assignee:
Honeywell, Inc., Minneapolis, MN
Patent Number(s):
US 4614957
Application Number:
TRN: 86-034741
OSTI ID:
5048977
Resource Relation:
Patent File Date: Filed date 04 Dec 1984
Country of Publication:
United States
Language:
English