High-power operation of AlGaAs SQW-SCH broad-area laser diodes for Nd:YAG solid-state laser pumping

Journal Article · Fri Feb 01 00:00:00 EST 1991 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.76872· OSTI ID:5047909

Nagai, Y; Shigihara, K; Takami, A; Karakida, S; Kokubo, Y ^[1]; Tada, A ^[2]

---

1. Optoelectronic and Microwave Devices R and D Lab., Mitsubishi Electric Corp., Itami City, Hyogo 664 (JP)
2. Okayama Univ. of Science, Okayama, Okayama 700 (JP)

AlGaAs single-quantum-well separate-confinement-heterostructure single-stripe broad-area laser diodes for Nd:YAG solid-stage laser pumping have been developed. The high-power operation of 2.6 W in the range of Nd:YAG absorption band, that is 808 nm, has been realized.

• OSTI ID: 5047909
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Vol. 3:2; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
LIGHT SOURCES
SOLID STATE LASERS
OPTICAL PUMPING
ALUMINIUM ARSENIDES
FERRITE GARNETS
GALLIUM ARSENIDES
HETEROJUNCTIONS
NEAR INFRARED RADIATION
NEODYMIUM ADDITIONS
OPERATION
POWER
SEMICONDUCTOR DIODES
ALLOYS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INFRARED RADIATION
JUNCTIONS
LASERS
MINERALS
NEODYMIUM ALLOYS
OXIDE MINERALS
PNICTIDES
PUMPING
RADIATION SOURCES
RADIATIONS
RARE EARTH ADDITIONS
RARE EARTH ALLOYS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SILICATE MINERALS
426002* - Engineering- Lasers & Masers- (1990-)