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Title: Structure and mechanism of bonding at a diffusion-bonded Al/SiC interface

Abstract

Al/SiC interfaces were fabricated by diffusion bonding a pure Al foil between two blocks of SiC for temperatures ranging from 500 to 600 C. For samples bonded below 586 C, the interfacial strength was low and TEM specimens could not be fabricated due to separation of the Al and SiC pieces during thinning. For samples bonded at and above 586 C, a strong bond was formed and conventional and high-resolution transmission electron microscopy revealed the formation of a thin amorphous phase at the interface. Compositional analysis showed that the interfacial phase contained Al, Si, C and O. Formation of the amorphous phase was demonstrated to occur by a solid state reaction is discussed on the basis of thermodynamic and kinetic considerations. Lastly, some of the advantages of having an amorphous phase at a metal/ceramic interface are discussed.

Authors:
;  [1]
  1. (Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering)
Publication Date:
OSTI Identifier:
5046695
Resource Type:
Journal Article
Journal Name:
Acta Metallurgica et Materialia; (United States)
Additional Journal Information:
Journal Volume: 42:3; Journal ID: ISSN 0956-7151
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ALLOYS; FABRICATION; THERMODYNAMIC PROPERTIES; COMPOSITE MATERIALS; INTERFACES; CHEMICAL BONDS; SILICON CARBIDES; PHASE STUDIES; ALLOYS; CARBIDES; CARBON COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; 360602* - Other Materials- Structure & Phase Studies; 360601 - Other Materials- Preparation & Manufacture; 360606 - Other Materials- Physical Properties- (1992-)

Citation Formats

Ratnaparkhi, P.L., and Howe, J.M. Structure and mechanism of bonding at a diffusion-bonded Al/SiC interface. United States: N. p., 1994. Web. doi:10.1016/0956-7151(94)90276-3.
Ratnaparkhi, P.L., & Howe, J.M. Structure and mechanism of bonding at a diffusion-bonded Al/SiC interface. United States. doi:10.1016/0956-7151(94)90276-3.
Ratnaparkhi, P.L., and Howe, J.M. Tue . "Structure and mechanism of bonding at a diffusion-bonded Al/SiC interface". United States. doi:10.1016/0956-7151(94)90276-3.
@article{osti_5046695,
title = {Structure and mechanism of bonding at a diffusion-bonded Al/SiC interface},
author = {Ratnaparkhi, P.L. and Howe, J.M.},
abstractNote = {Al/SiC interfaces were fabricated by diffusion bonding a pure Al foil between two blocks of SiC for temperatures ranging from 500 to 600 C. For samples bonded below 586 C, the interfacial strength was low and TEM specimens could not be fabricated due to separation of the Al and SiC pieces during thinning. For samples bonded at and above 586 C, a strong bond was formed and conventional and high-resolution transmission electron microscopy revealed the formation of a thin amorphous phase at the interface. Compositional analysis showed that the interfacial phase contained Al, Si, C and O. Formation of the amorphous phase was demonstrated to occur by a solid state reaction is discussed on the basis of thermodynamic and kinetic considerations. Lastly, some of the advantages of having an amorphous phase at a metal/ceramic interface are discussed.},
doi = {10.1016/0956-7151(94)90276-3},
journal = {Acta Metallurgica et Materialia; (United States)},
issn = {0956-7151},
number = ,
volume = 42:3,
place = {United States},
year = {1994},
month = {3}
}