Frequency dependences of the photocurrent in surface-barrier structures based on amorphous hydrogenated silicon: theory

Journal Article · Sat Oct 01 00:00:00 EDT 1983 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:5045149

Sachenko, A V

The frequency dependences of the photocurrent in Schottky diodes made of amorphous hydrogenated silicon are analyzed theoretically, taking into account the short diffusion length and the features of the shape of the space charge region. It is shown that in this case the carrier collection length decreases with increasing light absorption coefficient, i.e., the decreasing wavelength of the illumination. Conditions are formulated for recombination to be negligible in the high-field region, where the distribution of minority carriers is governed by their drift velocity. Relations between the collection length and the diffusion length are derived.

• Research Organization: Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, Kiev
• OSTI ID: 5045149
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 17:10
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SCHOTTKY BARRIER DIODES
PHOTOCONDUCTIVITY
SILICON
AMORPHOUS STATE
DIFFUSION LENGTH
FREQUENCY DEPENDENCE
HOLES
HYDROGENATION
INHIBITION
RECOMBINATION
SPACE CHARGE
CHEMICAL REACTIONS
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
LENGTH
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
140501* - Solar Energy Conversion- Photovoltaic Conversion