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Title: Radiation-hardened CMOS/SOI development status

Conference · · Trans. Am. Nucl. Soc.; (United States)
OSTI ID:5040856

Research Organization:
Naval Research Lab., Washington, DC
OSTI ID:
5040856
Report Number(s):
CONF-850610-
Journal Information:
Trans. Am. Nucl. Soc.; (United States), Vol. 49; Conference: Annual meeting of the American Nuclear Society, Boston, MA, USA, 9 Jun 1985
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
INTEGRATED CIRCUITS
RADIATION HARDENING
MOS TRANSISTORS
SEMICONDUCTOR DEVICES
CRYSTAL GROWTH
SEMICONDUCTOR MATERIALS
THIN FILM STORAGE DEVICES
ELECTRONIC CIRCUITS
HARDENING
MATERIALS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
TRANSISTORS
360605* - Materials- Radiation Effects
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems