Theory of electric field-induced optical modulation in single and multiquantum well structures using a Monte Carlo approach
A Monte Carlo approach is used in conjunction with the variational method to calculate quasi-bound levels in arbitrary quantum wells in the presence of transverse electric field. This approach is expected to be superior to the conventional variational approach since the results do not depend upon the choice of any starting wave solution. The techniques is applied to Al/sub 0.3/Ga/sub 0.7/As/GaAs quantum wells. The shift in the ground state level energies is calculated, along with the tunneling rates for the electrons and holes. We find that the tunneling rates are very sensitive to the band edge discontinuity distribution and to the barrier width in the case of multiquantum wells. The exciton binding energy is also calculated. Due to high tunneling rates at high electric fields, the photoluminescence is expected to be quenched. Consequences of these results are examined.
- Research Organization:
- Dept. of Electrical Engineering and Computer Science, Univ. of Michigan, Ann Arbor, MI 48109
- OSTI ID:
- 5038910
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Vol. QE-22:10
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
OPTICAL PROPERTIES
ELECTRIC FIELDS
PHOTOLUMINESCENCE
GALLIUM ARSENIDES
BAND THEORY
BINDING ENERGY
COMPUTER CALCULATIONS
ELECTRONS
EXCITONS
GROUND STATES
HOLES
MODULATION
MONTE CARLO METHOD
QUENCHING
SENSITIVITY
TUNNEL EFFECT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTARY PARTICLES
ENERGY
ENERGY LEVELS
FERMIONS
GALLIUM COMPOUNDS
LEPTONS
LUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
360603* - Materials- Properties