Evidence of p/n homojunction formation in Zn/sub 3/P/sub 2/
Abstract
Heating of magnesium/p-Zn/sub 3/P/sub 2/ contacts at 100 /sup 0/C results in a approx. 10/sup 2/ lower reverse saturation current than found for the unheated metal-semiconductor diode. Spectral response and electron-beam-induced current (EBIC) measurements show the formation of a buried junction upon heating, and the latter method has been used to obtain values of junction depth and minority carrier diffusion length. A model expressing the collection efficiency of an n-on-p homojunction shows good agreement with experiment when the minority carrier diffusion lengths and junction depth determined by EBIC measurements are used. This is the first evidence that p/n homojunctions may be formed in Zn/sub 3/P/sub 2/.
- Authors:
- Publication Date:
- Research Org.:
- Institute of Energy Conversion, University of Delaware, Newark, Delaware 19711
- OSTI Identifier:
- 5029133
- Resource Type:
- Journal Article
- Journal Name:
- Appl. Phys. Lett.; (United States)
- Additional Journal Information:
- Journal Volume: 37:6
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; P-N JUNCTIONS; CHARGE CARRIERS; ZINC PHOSPHIDES; COMPARATIVE EVALUATIONS; DIFFUSION LENGTH; EFFICIENCY; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRON BEAMS; HEATING; MAGNESIUM; MATHEMATICAL MODELS; MEDIUM TEMPERATURE; METALS; P-TYPE CONDUCTORS; SPECTRA; ALKALINE EARTH METALS; BEAMS; CURRENTS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; JUNCTIONS; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; ZINC COMPOUNDS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)
Citation Formats
Catalano, A, and Bhushan, M. Evidence of p/n homojunction formation in Zn/sub 3/P/sub 2/. United States: N. p., 1980.
Web. doi:10.1063/1.91786.
Catalano, A, & Bhushan, M. Evidence of p/n homojunction formation in Zn/sub 3/P/sub 2/. United States. https://doi.org/10.1063/1.91786
Catalano, A, and Bhushan, M. 1980.
"Evidence of p/n homojunction formation in Zn/sub 3/P/sub 2/". United States. https://doi.org/10.1063/1.91786.
@article{osti_5029133,
title = {Evidence of p/n homojunction formation in Zn/sub 3/P/sub 2/},
author = {Catalano, A and Bhushan, M},
abstractNote = {Heating of magnesium/p-Zn/sub 3/P/sub 2/ contacts at 100 /sup 0/C results in a approx. 10/sup 2/ lower reverse saturation current than found for the unheated metal-semiconductor diode. Spectral response and electron-beam-induced current (EBIC) measurements show the formation of a buried junction upon heating, and the latter method has been used to obtain values of junction depth and minority carrier diffusion length. A model expressing the collection efficiency of an n-on-p homojunction shows good agreement with experiment when the minority carrier diffusion lengths and junction depth determined by EBIC measurements are used. This is the first evidence that p/n homojunctions may be formed in Zn/sub 3/P/sub 2/.},
doi = {10.1063/1.91786},
url = {https://www.osti.gov/biblio/5029133},
journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 37:6,
place = {United States},
year = {Mon Sep 15 00:00:00 EDT 1980},
month = {Mon Sep 15 00:00:00 EDT 1980}
}
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