Room temperature tunneling characteristics of ultra-small normal junctions

Journal Article · Fri Feb 28 00:00:00 EST 1992 · Modern Physics Letters B; (Singapore)

DOI:https://doi.org/10.1142/S0217984992000363· OSTI ID:5028123

Reeve, M D; Symko, O G; Li, R ^[1]

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1. Dept. of Physics, Univ. of Utah, Salt Lake City, UT (US)

This paper reports on tunneling studies between a Scanning tunneling Microscope (STM)-controlled fine NbN tip and a NbN thin film that shows single electron tunneling characteristics at room temperature. The I-V curves display the Coulomb blockade and the Coulomb staircase caused by single electron charging of a series combination of two tunnel junctions. These room temperature observations indicate that it may be possible to operate single-electron-based devices in non-cryogenic regimes.

• OSTI ID: 5028123
• Journal Information: Modern Physics Letters B; (Singapore), Vol. 6:5; ISSN 0217-9849
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
NIOBIUM NITRIDES
TUNNEL EFFECT
COULOMB FIELD
ELECTRIC CONDUCTIVITY
SCANNING ELECTRON MICROSCOPY
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
FILMS
MICROSCOPY
NIOBIUM COMPOUNDS
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
TEMPERATURE RANGE
TRANSITION ELEMENT COMPOUNDS
360207* - Ceramics
Cermets
& Refractories- Superconducting Properties- (1992-)
360204 - Ceramics
Cermets
& Refractories- Physical Properties