Electronic and atomic structure of thin CoSi sub 2 films on Si(111) and Si(100)
Abstract
The electronic and atomic structure of very thin epitaxial cobalt silicide films was studied to provide insight into the initial stages of interface formation. Thin CoSi{sub 2} films (3--30 A) on Si(111) and Si(100) were studied experimentally using angle-resolved photoemission spectroscopy, low-energy electron diffraction (LEED), and Auger electron spectroscopy, and computationally using the pseudofunction method of Kasowski for determining the electronic band structure. The experimental and computational results support the models of Hellman and Tung for Co-rich and Si-rich CoSi{sub 2}(111) surfaces. The surface-state dispersion that we measure for the Co-rich variant agrees with the behavior that we calculate for the Hellman-Tung model. For the Si-rich variant, the essentially bulklike bonding environment of the outermost Co atoms in the Hellman-Tung model agrees with the photoemission results. Preliminary results for thin films of CoSi{sub 2} on Si(100) grown by a template technique show clearly a strong dependence of film quality on the annealing temperature and initial Co thickness. A model for surface structure is suggested that accounts for LEED and photoemission results.
- Authors:
-
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
- AT T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)
- Publication Date:
- OSTI Identifier:
- 5026968
- DOE Contract Number:
- AC02-76CH00016
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review, B: Condensed Matter; (United States)
- Additional Journal Information:
- Journal Volume: 45:3; Journal ID: ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COBALT SILICIDES; ELECTRONIC STRUCTURE; INTERFACES; SILICON; ANNEALING; AUGER EFFECT; CHEMISORPTION; COBALT; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; EPITAXY; PHOTOEMISSION; THIN FILMS; CHEMICAL REACTIONS; COBALT COMPOUNDS; COHERENT SCATTERING; DIFFRACTION; ELEMENTS; EMISSION; FILMS; HEAT TREATMENTS; METALS; SCATTERING; SECONDARY EMISSION; SEMIMETALS; SEPARATION PROCESSES; SILICIDES; SILICON COMPOUNDS; SORPTION; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; 360602* - Other Materials- Structure & Phase Studies; 665000 - Physics of Condensed Matter- (1992-)
Citation Formats
Chambliss, D D, Rhodin, T N, and Rowe, J E. Electronic and atomic structure of thin CoSi sub 2 films on Si(111) and Si(100). United States: N. p., 1992.
Web. doi:10.1103/PhysRevB.45.1193.
Chambliss, D D, Rhodin, T N, & Rowe, J E. Electronic and atomic structure of thin CoSi sub 2 films on Si(111) and Si(100). United States. https://doi.org/10.1103/PhysRevB.45.1193
Chambliss, D D, Rhodin, T N, and Rowe, J E. 1992.
"Electronic and atomic structure of thin CoSi sub 2 films on Si(111) and Si(100)". United States. https://doi.org/10.1103/PhysRevB.45.1193.
@article{osti_5026968,
title = {Electronic and atomic structure of thin CoSi sub 2 films on Si(111) and Si(100)},
author = {Chambliss, D D and Rhodin, T N and Rowe, J E},
abstractNote = {The electronic and atomic structure of very thin epitaxial cobalt silicide films was studied to provide insight into the initial stages of interface formation. Thin CoSi{sub 2} films (3--30 A) on Si(111) and Si(100) were studied experimentally using angle-resolved photoemission spectroscopy, low-energy electron diffraction (LEED), and Auger electron spectroscopy, and computationally using the pseudofunction method of Kasowski for determining the electronic band structure. The experimental and computational results support the models of Hellman and Tung for Co-rich and Si-rich CoSi{sub 2}(111) surfaces. The surface-state dispersion that we measure for the Co-rich variant agrees with the behavior that we calculate for the Hellman-Tung model. For the Si-rich variant, the essentially bulklike bonding environment of the outermost Co atoms in the Hellman-Tung model agrees with the photoemission results. Preliminary results for thin films of CoSi{sub 2} on Si(100) grown by a template technique show clearly a strong dependence of film quality on the annealing temperature and initial Co thickness. A model for surface structure is suggested that accounts for LEED and photoemission results.},
doi = {10.1103/PhysRevB.45.1193},
url = {https://www.osti.gov/biblio/5026968},
journal = {Physical Review, B: Condensed Matter; (United States)},
issn = {0163-1829},
number = ,
volume = 45:3,
place = {United States},
year = {Wed Jan 15 00:00:00 EST 1992},
month = {Wed Jan 15 00:00:00 EST 1992}
}