GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet
Abstract
We report the first use of reactive-ion etching (RIE) to form mirror facets on GaInAsP/Inp double-heterostructure (DH) lasers (lambdaapprox.1.3 ..mu..m). The RIE, performed with a Cl/sub 2/:O/sub 2/ gas mixture, provides vertical etched walls with no undercutting. Initial laser results demonstrate that quasi-single-mode operation and reasonable threshold currents are possible.
- Authors:
- Publication Date:
- Research Org.:
- Bell Laboratories, Holmdel, New Jersey 07733
- OSTI Identifier:
- 5011124
- Resource Type:
- Journal Article
- Journal Name:
- Appl. Phys. Lett.; (United States)
- Additional Journal Information:
- Journal Volume: 37:8
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; LASER MIRRORS; FABRICATION; SEMICONDUCTOR LASERS; CHLORINE; CONFIGURATION; ETCHING; EXPERIMENTAL DATA; GALLIUM ARSENIDES; GASES; INDIUM PHOSPHIDES; INFRARED RADIATION; IONS; MIXTURES; OSCILLATION MODES; OXYGEN; ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; DATA; DISPERSIONS; ELECTROMAGNETIC RADIATION; ELEMENTS; FLUIDS; GALLIUM COMPOUNDS; HALOGENS; INDIUM COMPOUNDS; INFORMATION; LASERS; MIRRORS; NONMETALS; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SURFACE FINISHING; 420300* - Engineering- Lasers- (-1989)
Citation Formats
Coldren, L A, Iga, K, Miller, B I, and Rentschler, J A. GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet. United States: N. p., 1980.
Web. doi:10.1063/1.92050.
Coldren, L A, Iga, K, Miller, B I, & Rentschler, J A. GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet. United States. https://doi.org/10.1063/1.92050
Coldren, L A, Iga, K, Miller, B I, and Rentschler, J A. 1980.
"GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet". United States. https://doi.org/10.1063/1.92050.
@article{osti_5011124,
title = {GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet},
author = {Coldren, L A and Iga, K and Miller, B I and Rentschler, J A},
abstractNote = {We report the first use of reactive-ion etching (RIE) to form mirror facets on GaInAsP/Inp double-heterostructure (DH) lasers (lambdaapprox.1.3 ..mu..m). The RIE, performed with a Cl/sub 2/:O/sub 2/ gas mixture, provides vertical etched walls with no undercutting. Initial laser results demonstrate that quasi-single-mode operation and reasonable threshold currents are possible.},
doi = {10.1063/1.92050},
url = {https://www.osti.gov/biblio/5011124},
journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 37:8,
place = {United States},
year = {Wed Oct 15 00:00:00 EDT 1980},
month = {Wed Oct 15 00:00:00 EDT 1980}
}
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