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Title: Low-threshold proton-implanted 1.3-{micro}m vertical cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors

Abstract

The authors demonstrate a new structure for long-wavelength (1.3-{micro}m) vertical-cavity top-surface-emitting lasers using proton implantation for current confinement. Wafer-bonded GaAs-AlAs Bragg mirrors and dielectric mirrors are used for bottom and top mirrors, respectively. The gain medium of the lasers consists of nine strain-compensated AlGaInAs quantum wells. A record low room temperature pulsed threshold current density of 1.13 kA/cm{sup 2} has been achieved for 15-{micro}m diameter devices with a threshold current of 2 mA. The side-mode-suppression-ratio is greater than 35 dB.

Authors:
; ;  [1]; ;  [2]; ;  [3]; ;  [4]
  1. Cornell Univ., Ithaca, NY (United States). School of Electrical Engineering
  2. Univ. of Texas, Austin, TX (United States)
  3. Sandia National Labs., Albuquerque, NM (United States). Dept. of Semiconductor Materials
  4. Chunghwa Telecom Co. (Taiwan, Province of China). Telecommunications Labs.
Publication Date:
OSTI Identifier:
500924
Resource Type:
Journal Article
Journal Name:
IEEE Photonics Technology Letters
Additional Journal Information:
Journal Volume: 9; Journal Issue: 7; Other Information: PBD: Jul 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; ION IMPLANTATION; LASER MATERIALS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; LASER MIRRORS; DESIGN; THRESHOLD CURRENT

Citation Formats

Qian, Y, Zhu, Z H, Lo, Y H, Huffaker, D L, Deppe, D G, Hou, H Q, Hammons, B E, Lin, W, and Tu, Y K. Low-threshold proton-implanted 1.3-{micro}m vertical cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors. United States: N. p., 1997. Web. doi:10.1109/68.593326.
Qian, Y, Zhu, Z H, Lo, Y H, Huffaker, D L, Deppe, D G, Hou, H Q, Hammons, B E, Lin, W, & Tu, Y K. Low-threshold proton-implanted 1.3-{micro}m vertical cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors. United States. doi:10.1109/68.593326.
Qian, Y, Zhu, Z H, Lo, Y H, Huffaker, D L, Deppe, D G, Hou, H Q, Hammons, B E, Lin, W, and Tu, Y K. Tue . "Low-threshold proton-implanted 1.3-{micro}m vertical cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors". United States. doi:10.1109/68.593326.
@article{osti_500924,
title = {Low-threshold proton-implanted 1.3-{micro}m vertical cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors},
author = {Qian, Y and Zhu, Z H and Lo, Y H and Huffaker, D L and Deppe, D G and Hou, H Q and Hammons, B E and Lin, W and Tu, Y K},
abstractNote = {The authors demonstrate a new structure for long-wavelength (1.3-{micro}m) vertical-cavity top-surface-emitting lasers using proton implantation for current confinement. Wafer-bonded GaAs-AlAs Bragg mirrors and dielectric mirrors are used for bottom and top mirrors, respectively. The gain medium of the lasers consists of nine strain-compensated AlGaInAs quantum wells. A record low room temperature pulsed threshold current density of 1.13 kA/cm{sup 2} has been achieved for 15-{micro}m diameter devices with a threshold current of 2 mA. The side-mode-suppression-ratio is greater than 35 dB.},
doi = {10.1109/68.593326},
journal = {IEEE Photonics Technology Letters},
number = 7,
volume = 9,
place = {United States},
year = {1997},
month = {7}
}