Chemical vapor deposition of copper via disproportionation of hexfluoroacetylacetonato(1,5-cyclooctadiene) copper(I), (hfac)Cu(1,5-COD)

Journal Article · Sat Feb 01 00:00:00 EST 1992 · Journal of Materials Research; (United States)

DOI:https://doi.org/10.1557/JMR.1992.0261· OSTI ID:5008925

Jain, A ^[1]; Chi, K M; Hampden-Smith, M J ^[2]; Kodas, T T ^[3]; Farr, J D; Paffett, M F ^[4]

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1. Department of Chemical Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)
2. Department of Chemistry and Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, New Mexico 87131 (United States)
3. Department of Chemical Engineering and Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, New Mexico 87131 (United States)
4. CLS-1, Los Alamos National Laboratories, Los Alamos, New Mexico 87545 (United States)

Hot- and cold-wall chemical vapor deposition (CVD) using the volatile copper(I) compound (hfac)Cu(1,5-COD), where hfac=1,1,1,5,5,5-hexafluoroacetylacetonate and 1,5-COD =1,5-cyclooctadiene, as a precursor was carried out in hot-wall and warm-wall, lamp-heated reactors using SiO{sub 2} substrates that had been patterned with Pt or W, over a temperature range 120 {degree}C--250 {degree}C. Deposition was observed onto Pt, W, and SiO{sub 2} over this temperature range at rates of up to 3750 A/min to give copper films that contained no detectable impurities by Auger electron spectroscopy and gave resistivities of 1.9--5.7 {mu} ohm cm. The volatile by-products formed during deposition were 1,5-COD and Cu(hfac){sub 2} and a mass balance was consistent with the quantitative disproportionation reaction: 2(hfac)Cu(1,5-COD) {r arrow}Cu+Cu(hfac){sub 2}+2(1,5-COD). The measured activation energy for this CVD reaction was 26(2) kcal/mol. The absence of selectivity for metal surfaces in the presence of SiO{sub 2} is in contrast to CVD results for the related compounds ({beta}-diketonate)Cu(PMe{sub 3}) where {beta}-diketonate=hfac, 1,1,1-trifluoracetylacetonate (tfac), and acetylacetonate (acac).

• OSTI ID: 5008925
• Journal Information: Journal of Materials Research; (United States), Vol. 7:2; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER
CHEMICAL VAPOR DEPOSITION
AUGER ELECTRON SPECTROSCOPY
DECOMPOSITION
ELECTRIC CONDUCTIVITY
FILMS
MEDIUM VACUUM
ORGANIC COMPOUNDS
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
CHEMICAL COATING
CHEMICAL REACTIONS
DEPOSITION
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ELEMENTS
METALS
PHYSICAL PROPERTIES
SPECTROSCOPY
SURFACE COATING
TEMPERATURE RANGE
TRANSITION ELEMENTS
360101* - Metals & Alloys- Preparation & Fabrication