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Title: Surface emission of In{sub x}Ga{sub 1{minus}x}N epilayers under strong optical excitation

Abstract

Effects of strong optical excitation on the properties of surface emission from an InGaN/GaN heterostructure grown by metal-organic chemical-vapor deposition have been investigated. An intriguing feature observed was that as the excitation intensity increased the surface emission spectrum evolved abruptly from a single dominating band to two dominating bands at a critical intensity. This phenomenon has a sharp phase transition or a switching character and can be accounted for by (i) the formation of an electron{endash}hole plasma state in the InGaN vertical cavity under strong optical excitation, (ii) the photoreflectance effect (variation of index of refraction with excitation intensity), and (c) the Fabry{endash}P{acute e}rot interference effect in the InGaN vertical cavity. These findings are expected to have impact on the design of the laser structures, in particular on the design of the vertical-cavity surface-emitting laser diodes based on III-nitride wide-band-gap semiconductors. {copyright} {ital 1997 American Institute of Physics.}

Authors:
;  [1]; ; ;  [2]
  1. Department of Physics, Kansas State University, Manhattan, Kansas 66502-2601 (United States)
  2. APA Optics, Inc., 2950 North East 84th Lane, Blaine, Minnesota 55449 (United States)
Publication Date:
OSTI Identifier:
497637
DOE Contract Number:  
FG03-96ER45604
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 70; Journal Issue: 8; Other Information: PBD: Feb 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM NITRIDES; EMISSION SPECTRA; GALLIUM NITRIDES; PHOTOLUMINESCENCE; LASER MATERIALS; CHEMICAL VAPOR DEPOSITION; SURFACE PROPERTIES; EXCITATION; ELECTRON-HOLE COUPLING; REFRACTIVE INDEX; SEMICONDUCTOR JUNCTIONS; photoreflectance; surface emitting lasers

Citation Formats

Jiang, H.X., Lin, J.Y., Khan, M.A., Chen, Q., and Yang, J.W. Surface emission of In{sub x}Ga{sub 1{minus}x}N epilayers under strong optical excitation. United States: N. p., 1997. Web. doi:10.1063/1.118456.
Jiang, H.X., Lin, J.Y., Khan, M.A., Chen, Q., & Yang, J.W. Surface emission of In{sub x}Ga{sub 1{minus}x}N epilayers under strong optical excitation. United States. doi:10.1063/1.118456.
Jiang, H.X., Lin, J.Y., Khan, M.A., Chen, Q., and Yang, J.W. Sat . "Surface emission of In{sub x}Ga{sub 1{minus}x}N epilayers under strong optical excitation". United States. doi:10.1063/1.118456.
@article{osti_497637,
title = {Surface emission of In{sub x}Ga{sub 1{minus}x}N epilayers under strong optical excitation},
author = {Jiang, H.X. and Lin, J.Y. and Khan, M.A. and Chen, Q. and Yang, J.W.},
abstractNote = {Effects of strong optical excitation on the properties of surface emission from an InGaN/GaN heterostructure grown by metal-organic chemical-vapor deposition have been investigated. An intriguing feature observed was that as the excitation intensity increased the surface emission spectrum evolved abruptly from a single dominating band to two dominating bands at a critical intensity. This phenomenon has a sharp phase transition or a switching character and can be accounted for by (i) the formation of an electron{endash}hole plasma state in the InGaN vertical cavity under strong optical excitation, (ii) the photoreflectance effect (variation of index of refraction with excitation intensity), and (c) the Fabry{endash}P{acute e}rot interference effect in the InGaN vertical cavity. These findings are expected to have impact on the design of the laser structures, in particular on the design of the vertical-cavity surface-emitting laser diodes based on III-nitride wide-band-gap semiconductors. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.118456},
journal = {Applied Physics Letters},
number = 8,
volume = 70,
place = {United States},
year = {Sat Feb 01 00:00:00 EST 1997},
month = {Sat Feb 01 00:00:00 EST 1997}
}