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Title: Photoelectrochemical conversion in a WO{sub 3} coated p-Si photoelectrode: Effect of annealing temperature

Abstract

The photoelectrochemical properties of a p-type silicon (100) electrode coated with tungsten oxide thin film were investigated as a function of annealing temperature. The variation in the annealing temperature affected the photocurrent of a WO{sub 3}/p-Si electrode. A maximum photocurrent was obtained when the 500 {Angstrom} WO{sub 3} thin film coated p-Si electrode was annealed at 350{degree}C for 1 h. A further increase in the annealing temperature and film thickness degraded the photocurrent. This can be explained in terms of electrical resistivity, carrier concentration, and depletion layer width. A WO{sub 3} thin film deposition on the p-Si shifted the flatband potential of the p-Si electrode by 0.3 V in the anodic direction, resulting in an improvement in conversion efficiency. These results are supported by x-ray diffraction, Auger electron spectroscopy, and capacitance measurements. {copyright} {ital 1997 American Institute of Physics.}

Authors:
; ;  [1]
  1. Department of Ceramic Engineering, Yonsei University, Seoul 120-749 (Korea)
Publication Date:
OSTI Identifier:
496388
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 81; Journal Issue: 10; Other Information: PBD: May 1997
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; PHOTOELECTROCHEMICAL CELLS; ELECTRODES; TUNGSTEN COMPOUNDS; PHOTOCONDUCTIVITY; ELECTRIC CONDUCTIVITY; CARRIER DENSITY; X-RAY DIFFRACTION; AUGER EFFECT; SILICON; TUNGSTEN OXIDES; THIN FILMS; ANNEALING; PHOTOCURRENTS; TEMPERATURE DEPENDENCE; PHASE STUDIES

Citation Formats

Yoon, K H, Shin, C W, and Kang, D H. Photoelectrochemical conversion in a WO{sub 3} coated p-Si photoelectrode: Effect of annealing temperature. United States: N. p., 1997. Web. doi:10.1063/1.365268.
Yoon, K H, Shin, C W, & Kang, D H. Photoelectrochemical conversion in a WO{sub 3} coated p-Si photoelectrode: Effect of annealing temperature. United States. https://doi.org/10.1063/1.365268
Yoon, K H, Shin, C W, and Kang, D H. Thu . "Photoelectrochemical conversion in a WO{sub 3} coated p-Si photoelectrode: Effect of annealing temperature". United States. https://doi.org/10.1063/1.365268.
@article{osti_496388,
title = {Photoelectrochemical conversion in a WO{sub 3} coated p-Si photoelectrode: Effect of annealing temperature},
author = {Yoon, K H and Shin, C W and Kang, D H},
abstractNote = {The photoelectrochemical properties of a p-type silicon (100) electrode coated with tungsten oxide thin film were investigated as a function of annealing temperature. The variation in the annealing temperature affected the photocurrent of a WO{sub 3}/p-Si electrode. A maximum photocurrent was obtained when the 500 {Angstrom} WO{sub 3} thin film coated p-Si electrode was annealed at 350{degree}C for 1 h. A further increase in the annealing temperature and film thickness degraded the photocurrent. This can be explained in terms of electrical resistivity, carrier concentration, and depletion layer width. A WO{sub 3} thin film deposition on the p-Si shifted the flatband potential of the p-Si electrode by 0.3 V in the anodic direction, resulting in an improvement in conversion efficiency. These results are supported by x-ray diffraction, Auger electron spectroscopy, and capacitance measurements. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.365268},
url = {https://www.osti.gov/biblio/496388}, journal = {Journal of Applied Physics},
number = 10,
volume = 81,
place = {United States},
year = {1997},
month = {5}
}