Ion beams in silicon processing and characterization
- Sandia National Laboratories, Post Office Box 5800, Albuquerque, New Mexico 87185 (United States)
- New Jersey Institute of Technology, College of Science and Liberal Arts, 504 Cullimore Hall, University Heights, Newark, New Jersey 07102 (United States)
- Genus Corporation, 4 Muliken Way, Newburyport, Massachusetts 01950 (United States)
- Applied Materials, Implant Division, 9020-I Capital of Texas Highway North, Austin, Texas 78759 (United States)
- Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974-0636 (United States)
- Oak Ridge National Laboratory, Post Office Box 2008, Oak Ridge, Tennessee 37831-6057 (United States)
- University of Florida, Department of Electrical Engineering, 339 Larsen Hall, Gainesville, Florida 32611-6200 (United States)
- Evans East Incorporated, 666 Plainsboro Road, Plainsboro, New Jersey 08536 (United States)
- Arizona State University, Center for Solid State Science, Tempe, Arizona 85287-1704 (United States)
- University of Maryland, Energy Research Building, College Park, Maryland 20742-3511 (United States)
- University of Texas, BRC-MER Building, Austin, Texas 78712 (United States)
General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000; AC05-96OR22464
- OSTI ID:
- 496372
- Journal Information:
- Journal of Applied Physics, Vol. 81, Issue 10; Other Information: PBD: May 1997
- Country of Publication:
- United States
- Language:
- English
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