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Title: Investigation of the compensation mechanism in semi-insulating GaAs from alpha-spectra studies at low temperature

Abstract

We present the results of charge collection measurements on liquid encapsulated Czochralski grown semi-insulating GaAs devices for alpha particles. Experimental evidence is given which demonstrates a drastic enhancement of charge collection efficiency after prolonged illumination with 1.086 {mu}m below-gap light. The recovery of EL2 from metastable state to normal state can also be achieved by electric field at high bias voltage. The experimental result shows that the EL2 defect is practically the dominant trap for free charge carriers and together with other shallow defects responsible for the electric compensation in semi-insulating GaAs. The metastable transition of the EL2 defect is always simultaneously accompanied by the neutralization of a shallow acceptor. No change in the type of conductivity was found. {copyright} {ital 1997 American Institute of Physics.}

Authors:
;  [1]; ; ; ; ; ;  [2]
  1. Freiburg Materials Research Center, Stefan-Meier-Str.21, 79104 Freiburg (Germany)
  2. Department of Physics, Albert-Ludwigs-University, Hermann-Herder-Str.3, 79104 Freiburg (Germany)
Publication Date:
OSTI Identifier:
496366
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 70; Journal Issue: 20; Other Information: PBD: May 1997
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; GALLIUM ARSENIDES; CRYSTAL DEFECTS; RADIATION DETECTORS; ALPHA DETECTION; ELECTRIC CONDUCTIVITY; CHARGE COLLECTION; RADIATION EFFECTS; INFRARED RADIATION

Citation Formats

Chen, J W, Ebling, D G, Geppert, R, Irsigler, R, Schmid, T, Rogalla, M, Ludwig, J, and Runge, K. Investigation of the compensation mechanism in semi-insulating GaAs from alpha-spectra studies at low temperature. United States: N. p., 1997. Web. doi:10.1063/1.118981.
Chen, J W, Ebling, D G, Geppert, R, Irsigler, R, Schmid, T, Rogalla, M, Ludwig, J, & Runge, K. Investigation of the compensation mechanism in semi-insulating GaAs from alpha-spectra studies at low temperature. United States. https://doi.org/10.1063/1.118981
Chen, J W, Ebling, D G, Geppert, R, Irsigler, R, Schmid, T, Rogalla, M, Ludwig, J, and Runge, K. Thu . "Investigation of the compensation mechanism in semi-insulating GaAs from alpha-spectra studies at low temperature". United States. https://doi.org/10.1063/1.118981.
@article{osti_496366,
title = {Investigation of the compensation mechanism in semi-insulating GaAs from alpha-spectra studies at low temperature},
author = {Chen, J W and Ebling, D G and Geppert, R and Irsigler, R and Schmid, T and Rogalla, M and Ludwig, J and Runge, K},
abstractNote = {We present the results of charge collection measurements on liquid encapsulated Czochralski grown semi-insulating GaAs devices for alpha particles. Experimental evidence is given which demonstrates a drastic enhancement of charge collection efficiency after prolonged illumination with 1.086 {mu}m below-gap light. The recovery of EL2 from metastable state to normal state can also be achieved by electric field at high bias voltage. The experimental result shows that the EL2 defect is practically the dominant trap for free charge carriers and together with other shallow defects responsible for the electric compensation in semi-insulating GaAs. The metastable transition of the EL2 defect is always simultaneously accompanied by the neutralization of a shallow acceptor. No change in the type of conductivity was found. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.118981},
url = {https://www.osti.gov/biblio/496366}, journal = {Applied Physics Letters},
number = 20,
volume = 70,
place = {United States},
year = {1997},
month = {5}
}