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Title: Precision manufacturing using advanced optical interference lithography. Final report

Abstract

Goal was to develop interference lithography (IL) as a reliable process for patterning large-area, deep-submicron scale field emission arrays for field emission display (FED) applications. We have developed a system based on IL which can easily produce an array of 0.2-0.5 micron emitters over large area (up to 400 sq. in. to date) with better than 5% height and spacing uniformity. Process development as a result of this LDRD project represents a significant advance over the current state of the art for FED manufacturing and is applicable to all types of FEDs, independent of the emitter material. Ability of IL to pattern such structures simultaneously and uniformly on a large format has application to other technology areas, such as dynamic random access memory (DRAM) production and magnetic media recording.

Authors:
;
Publication Date:
Research Org.:
Lawrence Livermore National Lab., CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
491960
Report Number(s):
UCRL-ID-127161
ON: DE97053126
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 3 Apr 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 99 MATHEMATICS, COMPUTERS, INFORMATION SCIENCE, MANAGEMENT, LAW, MISCELLANEOUS; DISPLAY DEVICES; FIELD EMISSION; FABRICATION; PROGRESS REPORT; MEMORY DEVICES; MAGNETIC STORAGE DEVICES; MASKING

Citation Formats

Britten, J.A., and Hawryluk, A.M. Precision manufacturing using advanced optical interference lithography. Final report. United States: N. p., 1997. Web. doi:10.2172/491960.
Britten, J.A., & Hawryluk, A.M. Precision manufacturing using advanced optical interference lithography. Final report. United States. doi:10.2172/491960.
Britten, J.A., and Hawryluk, A.M. Thu . "Precision manufacturing using advanced optical interference lithography. Final report". United States. doi:10.2172/491960. https://www.osti.gov/servlets/purl/491960.
@article{osti_491960,
title = {Precision manufacturing using advanced optical interference lithography. Final report},
author = {Britten, J.A. and Hawryluk, A.M.},
abstractNote = {Goal was to develop interference lithography (IL) as a reliable process for patterning large-area, deep-submicron scale field emission arrays for field emission display (FED) applications. We have developed a system based on IL which can easily produce an array of 0.2-0.5 micron emitters over large area (up to 400 sq. in. to date) with better than 5% height and spacing uniformity. Process development as a result of this LDRD project represents a significant advance over the current state of the art for FED manufacturing and is applicable to all types of FEDs, independent of the emitter material. Ability of IL to pattern such structures simultaneously and uniformly on a large format has application to other technology areas, such as dynamic random access memory (DRAM) production and magnetic media recording.},
doi = {10.2172/491960},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Apr 03 00:00:00 EST 1997},
month = {Thu Apr 03 00:00:00 EST 1997}
}

Technical Report:

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