Silicon growth rate enhancement using trisilane in a laser direct-writing technique
- C.N.E.T.-France Telecom, Meylan (France)
An argon-ion laser based direct-writing technique was used to deposit micron-size silicon lines from the decomposition of silane (SiH{sub 4}) and trisilane (Si{sub 3}H{sub 8}) gases. The substrates used were 0.1 {micro}m polysilicon/1 {micro}m silicon dioxide/<100> monosilicon multilayered structures. The vertical silicon deposition rate was investigated as a function of the laser-induced surface temperature and gas pressure. For temperatures ranging between 1,000 and 1,410 C, the pressure was varied in the range 5--250 mbar and 0.1--30 mbar for SiH{sub 4} and Si{sub 3}H{sub 8}, respectively. For both gases, three growth regimes could be distinguished according to precursor pressure. The deposition rates achieved using trisilane are far higher than those obtained with silane in spite of the use of a reduced gas pressure range. For a laser-induced surface temperature of 1,300 C and a precursor pressure of 10 mbar, the deposition rates achieved using SiH{sub 4} and Si{sub 3}H{sub 8} are, respectively, 0.42 and 20 {micro}m/s, representing an enhancement factor of 50 with the later.
- OSTI ID:
- 490893
- Report Number(s):
- CONF-951155-; ISBN 1-55899-300-2; TRN: IM9729%%144
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Advanced laser processing of materials -- Fundamentals and applications; Singh, R. [ed.] [Univ. of Florida, Gainesville, FL (United States)]; Norton, D. [ed.] [Oak Ridge National Lab., TN (United States)]; Laude, L. [ed.] [Univ. of Mons-Hainaut, Mons (Belgium)]; Narayan, J. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Cheung, J. [ed.] [Rockwell International Science Center, Thousand Oaks, CA (United States)]; PB: 693 p.; Materials Research Society symposium proceedings, Volume 397
- Country of Publication:
- United States
- Language:
- English
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