Formation of p-type Cu{sub 3}BiS{sub 3} absorber thin films by annealing chemically deposited Bi{sub 2}S{sub 3}{endash}CuS thin films
- Photovoltaic Systems Group, Laboratorio de Energia Solar-IIM, Universidad Nacional Autonoma de Mexico, Temixco 62580, Morelos (Mexico)
- Department of Chemistry, Texas A M University, College Station, Texas 77843 (United States)
Formation of the ternary compound Cu{sub 3}BiS{sub 3} during annealing of chemically deposited CuS ({approximately}0.3 {mu}m) films on Bi{sub 2}S{sub 3} film ({approximately}0.1 {mu}m on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra on the films. The formation of Cu{sub 3}BiS{sub 3} (Wittichenite, JCPDS 9-488) is confirmed by the XRD patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4{times}10{sup 4} cm{sup {minus}1} at 2.48 eV or 0.50 {mu}m) and are p-type with electrical conductivity of 10{sup 2}{endash}10{sup 3} {Omega}{sup {minus}1} cm{sup {minus}1}. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated. {copyright} {ital 1997 Materials Research Society.}
- OSTI ID:
- 490181
- Journal Information:
- Journal of Materials Research, Vol. 12, Issue 3; Other Information: PBD: Mar 1997
- Country of Publication:
- United States
- Language:
- English
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