Molecular-dynamics simulations of hydrogenated amorphous silicon thin-film growth
- Mitsubishi Heavy Industries, Ltd., Yokohama (Japan). Advanced Technology Research Center
- Mitsubishi Heavy Industries, Ltd., Nagasaki (Japan). Nagasaki Research and Development Center
The authors have performed molecular-dynamics (MD) simulations of hydrogenated amorphous silicon (a-Si:H) thin-film growth using realistic many-body semiclassical potentials developed to describe Si-H interactions. In the MD model, it was assumed that SiH{sub 3}, SiH{sub 2} and the H radicals are main precursors for the thin-film growth. In MD simulations of a-Si:H thin-film growth by many significant precursor SiH{sub 3} radicals, they have evaluated average radical migration distances, defect ratios, hydrogen contents, and film growth rates as a function of different incident radical energies to know the effect of the radical energization on the properties. As a result of the comparison between the numerical and experimental results, it was observed that the agreement is fairly good, and that an increase of radical migration distance due to the radical energization is effective on a-Si:H thin-film growth with a low defect.
- OSTI ID:
- 488997
- Report Number(s):
- CONF-951155-; ISBN 1-55899-311-8; TRN: IM9728%%188
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Materials theory, simulations, and parallel algorithms; Kaxiras, E. [ed.] [Harvard Univ., Cambridge, MA (United States)]; Joannopoulos, J. [ed.] [Massachusetts Inst. of Tech., Cambridge, MA (United States)]; Vashishta, P.; Kalia, R.K. [eds.] [Louisiana State Univ., Baton Rouge, LA (United States)]; PB: 627 p.; Materials Research Society symposium proceedings, Volume 408
- Country of Publication:
- United States
- Language:
- English
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