XENON DIFFUSION IN SINGLE-CRYSTAL AND SINTERED UO$sub 2$

Technical Report · Tue Aug 01 00:00:00 EDT 1961

OSTI ID:4842749

Barnes, R H; Kangilaski, M; Melehan, J B; Rough, F A

The diffusion of xenon in single-crystal and in sintered UO/sub 2/ was studied by short-time neutron activation and subsequent heating. Considerable effort was devoted to the study of releasing area in the sintered material. It was found that diffusion rates in UO/sub 2/ single crystals at 1400 deg C are about two orders of magnitude lower than for sintered UO/sub 2/ materials. It is believed that this difference is associated with the presence of fewer defects in the singlecrystal material, probably as a result of the lower metallic-impurity content and greater crystalline perfection. No grain-boundary effects were observed for specimens having 2.2- and 23.7- mu grain sizes. (auth)

• Research Organization: Battelle Memorial Inst., Columbus, Ohio
• DOE Contract Number: W-7405-ENG-92
• NSA Number: NSA-15-029691
• OSTI ID: 4842749
• Report Number(s): BMI-1533
• Resource Relation: Other Information: Orig. Receipt Date: 31-DEC-61
• Country of Publication: United States
• Language: English

Related Subjects

METALS, CERAMICS, AND OTHER MATERIALS
ACTIVATION
DEFECTS
DIFFUSION
GRAIN BOUNDARIES
GRAIN SIZE
HEATING
HIGH TEMPERATURE
IMPURITIES
MONOCRYSTALS
NEUTRONS
QUANTITY RATIO
SINTERED MATERIALS
URANIUM DIOXIDE
XENON