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Title: POLARON BAND MODEL AND ITS APPLICATION TO Ce-S SEMICONDUCTORS

Abstract

The low-lying eigenstates of the large polarons'' were calculated for arbitrary strengths of the electron lattice interaction alpha . However, if alpha > 1 the large polaron picture becomes questionable, since for finite temperatures the polaron eigenstates may be strongly affected by the presence of thermal phonons; then a new approach to the polaron theory is applicable which takes into account the atomicity of the lattice and the presence of thermal phonons and which results in the small polaron'' picture. The eigenstates of small polarons depend on T. If the eigenstates form a band, the bandwidth is a function of T, and the eigenstates near the band extremum can be expressed in terms of a T-dependent effective mass. From measurements of the high- and low- frequency dielectric constants, of the temperature dependence of the Seebeck coefficient, and of the electronic mobility, it appears that the eigenstates of the electronic charge carriers in Ce-S semiconductors may be adequately described by the small polaron picture. (auth)

Authors:
;
Publication Date:
Research Org.:
General Dynamics Corp., San Diego, Calif.
Sponsoring Org.:
USDOE
OSTI Identifier:
4836552
NSA Number:
NSA-16-000606
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics (U.S.)
Additional Journal Information:
Journal Volume: Vol: 32: Suppl. to No. 10; Other Information: Orig. Receipt Date: 31-DEC-62
Country of Publication:
Country unknown/Code not available
Language:
English
Subject:
PHYSICS; CERIUM; DIELECTRICS; EIGENSTATES; ELECTRIC CHARGES; ELECTRONS; ENERGY LEVELS; FREQUENCY; INTERACTIONS; LATTICES; MASS; MATHEMATICS; MIXING; NUMERICALS; PHONONS; SEEBECK EFFECT; SEMICONDUCTORS; SOLIDS; SPECTRA; SULFUR; TEMPERATURE; THERMOELECTRICITY; VELOCITY; VIBRATIONS

Citation Formats

Appel, J, and Kurnick, S W. POLARON BAND MODEL AND ITS APPLICATION TO Ce-S SEMICONDUCTORS. Country unknown/Code not available: N. p., 1961. Web. doi:10.1063/1.1777044.
Appel, J, & Kurnick, S W. POLARON BAND MODEL AND ITS APPLICATION TO Ce-S SEMICONDUCTORS. Country unknown/Code not available. doi:10.1063/1.1777044.
Appel, J, and Kurnick, S W. Sun . "POLARON BAND MODEL AND ITS APPLICATION TO Ce-S SEMICONDUCTORS". Country unknown/Code not available. doi:10.1063/1.1777044.
@article{osti_4836552,
title = {POLARON BAND MODEL AND ITS APPLICATION TO Ce-S SEMICONDUCTORS},
author = {Appel, J and Kurnick, S W},
abstractNote = {The low-lying eigenstates of the large polarons'' were calculated for arbitrary strengths of the electron lattice interaction alpha . However, if alpha > 1 the large polaron picture becomes questionable, since for finite temperatures the polaron eigenstates may be strongly affected by the presence of thermal phonons; then a new approach to the polaron theory is applicable which takes into account the atomicity of the lattice and the presence of thermal phonons and which results in the small polaron'' picture. The eigenstates of small polarons depend on T. If the eigenstates form a band, the bandwidth is a function of T, and the eigenstates near the band extremum can be expressed in terms of a T-dependent effective mass. From measurements of the high- and low- frequency dielectric constants, of the temperature dependence of the Seebeck coefficient, and of the electronic mobility, it appears that the eigenstates of the electronic charge carriers in Ce-S semiconductors may be adequately described by the small polaron picture. (auth)},
doi = {10.1063/1.1777044},
journal = {Journal of Applied Physics (U.S.)},
number = ,
volume = Vol: 32: Suppl. to No. 10,
place = {Country unknown/Code not available},
year = {1961},
month = {10}
}