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Title: USE OF SEMICONDUCTOR SENSING ELEMENTS FOR RECORDING THE RELATIVE DISTRIBUTION OF THE FAST NEUTRON FLUX IN THE VVR-M REACTOR (in Russian)

Abstract

Usually S, P and Al foils with energy thresholds ranging from 1.5 to 6 Mev are used as threshold detectors for de t6rmining the fast neutron distribution in beam holes. Such termining the fast neutron distribution in beam holes. Such measurements may also be carried out by measuring the change in the electrical conductivity of semiconductors exposed to fast neutrons; this is based on the fact that the concentration of lattice defects which determine the conductivity is proportional to the integrated fast neutron flux. As sensing elements n-ty-pe Ge specimens in a 0.5-mm thick Cd cladding were used. The conductivity was followed by determining the changes in the current applied under constant voltage to the specimens during the irradiation. The relative distribution of the fast neutron flux in one of the vertical beam holes in the reflector of the reactor located in the A. F. Ioffe Physical-Technical Institute was determined by this method. (TTT)

Authors:
;
Publication Date:
Research Org.:
Originating Research Org. not identified
OSTI Identifier:
4811509
NSA Number:
NSA-16-007696
Resource Type:
Journal Article
Journal Name:
Atomnaya Energ.
Additional Journal Information:
Journal Volume: Vol: 11; Other Information: Orig. Receipt Date: 31-DEC-62
Country of Publication:
Country unknown/Code not available
Language:
Russian
Subject:
ENGINEERING AND EQUIPMENT; ALUMINUM; CADMIUM; ELECTRIC CONDUCTIVITY; FAST NEUTRONS; FOILS; GERMANIUM; IRRADIATION; LATTICES; NEUTRON FLUX; PHOSPHORUS; REACTORS; SEMICONDUCTORS; SENSITIVITY; SULFUR

Citation Formats

Konopleva, R F, and Novikov, S R. USE OF SEMICONDUCTOR SENSING ELEMENTS FOR RECORDING THE RELATIVE DISTRIBUTION OF THE FAST NEUTRON FLUX IN THE VVR-M REACTOR. Country unknown/Code not available: N. p., 1961. Web.
Konopleva, R F, & Novikov, S R. USE OF SEMICONDUCTOR SENSING ELEMENTS FOR RECORDING THE RELATIVE DISTRIBUTION OF THE FAST NEUTRON FLUX IN THE VVR-M REACTOR. Country unknown/Code not available.
Konopleva, R F, and Novikov, S R. Fri . "USE OF SEMICONDUCTOR SENSING ELEMENTS FOR RECORDING THE RELATIVE DISTRIBUTION OF THE FAST NEUTRON FLUX IN THE VVR-M REACTOR". Country unknown/Code not available.
@article{osti_4811509,
title = {USE OF SEMICONDUCTOR SENSING ELEMENTS FOR RECORDING THE RELATIVE DISTRIBUTION OF THE FAST NEUTRON FLUX IN THE VVR-M REACTOR},
author = {Konopleva, R F and Novikov, S R},
abstractNote = {Usually S, P and Al foils with energy thresholds ranging from 1.5 to 6 Mev are used as threshold detectors for de t6rmining the fast neutron distribution in beam holes. Such termining the fast neutron distribution in beam holes. Such measurements may also be carried out by measuring the change in the electrical conductivity of semiconductors exposed to fast neutrons; this is based on the fact that the concentration of lattice defects which determine the conductivity is proportional to the integrated fast neutron flux. As sensing elements n-ty-pe Ge specimens in a 0.5-mm thick Cd cladding were used. The conductivity was followed by determining the changes in the current applied under constant voltage to the specimens during the irradiation. The relative distribution of the fast neutron flux in one of the vertical beam holes in the reflector of the reactor located in the A. F. Ioffe Physical-Technical Institute was determined by this method. (TTT)},
doi = {},
journal = {Atomnaya Energ.},
number = ,
volume = Vol: 11,
place = {Country unknown/Code not available},
year = {1961},
month = {12}
}